IP Library › Granted Patent US 7,176,069
Granted Patent B2
US 7,176,069 · App. 10/771,155 · Granted Feb 13, 2007

Manufacture method of display device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,176,069
App. No.
10/771,155
Granted
Feb 13, 2007
Kind
B2
Abstract

It is an object of the present invention to reduce the consumption of materials for manufacturing a display device, simplify the manufacturing process and the apparatus used for it, and lower the manufacturing costs. The present invention provides a technique to manufacture a display device, applying a means to form a pattern such as a contact hole formed in a semiconductor film, a wiring or an insulating film, or a mask pattern to form such a pattern by drawing directly, a means to remove a film, such as etching and ashing, and a film forming means to selectively form an insulating film, a semiconductor film and a metal film on a predetermined region.

Claims (28)

1. A method for manufacturing a display device comprising the steps of:

forming a film which is at least an insulating film, a semiconductor film, and a metal film over a substrate by changing a gas into plasma and supplying the plasma from a plurality of discharging ports arranged in a uniaxial direction;

forming a wiring pattern by drawing a composition including a conductive material over the substrate by discharging the composition including the conductive material from a plurality of discharge outlets for the composition are arranged in a uniaxial direction;

forming a mask pattern by drawing a composition including a high molecular weight resin over the substrate by discharging the composition including the high molecular weight resin from a plurality of discharge outlets arranged in a uniaxial direction;

etching for removing selectively the film formed over the substrate by changing a gas into plasma and supplying the plasma from a plurality of discharging ports arranged in a uniaxial direction; and

removing the mask pattern made of the high molecular weight resin by changing a gas into plasma and supplying the plasma from a plurality of discharging ports arranged in a uniaxial direction.

2. A method for manufacturing a display device according to claim 1 , wherein each of the step of forming the film, the step of forming the wiring pattern, the etching step and the step of removing the mask pattern is performed under an atmospheric pressure or a pressure around an atmospheric pressure.

3. A method for manufacturing a display device comprising the steps of:

forming a pattern of a conductive film including a gate electrode, source and drain electrodes by discharging a composition from a plurality of discharge outlets arranged in a uniaxial direction;

forming a non-single crystal semiconductor film and an inorganic insulating film by changing a gas into plasma and supplying the plasma from a plurality of discharging ports arranged in a uniaxial direction; and

removing a part of the non-single crystal semiconductor film or the inorganic insulating film by changing a gas into plasma and supplying the plasma from a plurality of discharging ports arranged in a uniaxial direction.

4. A method for manufacturing a display device according to claim 3 , wherein each of the step of forming the pattern of the conductive film including the gate electrode, source and drain electrodes, the step of forming the non-single crystal semiconductor film and the inorganic insulating film, and the step of removing a part of the non-single crystal semiconductor film or the insulating film is performed under an atmospheric pressure or a pressure around an atmospheric pressure.

5. A method for manufacturing a display device according to claim 1 , wherein the step of forming the film, the step of forming the wiring pattern, the step of forming the mask pattern, the etching step and the step of removing the mask pattern are performed while sending the substrate wound off from a first roll to a second roll to be reeled.

6. A method for manufacturing a display device according to claim 3 , wherein the step of forming the pattern of the conductive film including the gate electrode, source and drain electrodes, the step of forming the non-single crystal semiconductor film and the inorganic insulating film, and the step of removing a part of the non-single crystal semiconductor film or the insulating film are performed while sending the substrate wound off from a first roll to a second roll to be reeled.

7. A method for manufacturing a display device comprising:

forming a film which is at least an insulating film, a semiconductor film, or a metal film over a substrate by changing a gas into plasma and supplying the plasma from a selected discharging port of a plurality of discharging ports arranged in a uniaxial direction;

forming a wiring pattern by drawing a composition including a conductive material over the substrate by discharging the composition including the conductive material from a selected discharging outlet of a plurality of discharge outlets arranged in a uniaxial direction;

forming a mask pattern by drawing a composition including a high molecular weight resin over the substrate by discharging the composition including the high molecular weight resin from a selected discharging outlet of a plurality of discharge outlets arranged in a uniaxial direction;

etching for removing selectively the film formed over the substrate by changing a gas into plasma and supplying the plasma from a selected discharging port of a plurality of discharging ports arranged in a uniaxial direction; and

removing the mask pattern made of the high molecular weight resin by changing a gas into plasma and supplying the plasma from a selected discharging port of a plurality of discharging ports arranged in a uniaxial direction.

8. A method for manufacturing a display device according to claim 7 , wherein each of the step of forming the film, the step of forming the wiring pattern, the etching step and the step of removing the mask pattern is performed under an atmospheric pressure or a pressure around an atmospheric pressure.

9. A method for manufacturing a display device according to claim 7 , wherein the step of forming the film, the step of forming the wiring pattern, the step of forming the mask pattern, the etching step and the step of removing the mask pattern are performed while sending the substrate wound off from a first roll to a second roll to be reeled.

10. A method for manufacturing a display device comprising the steps of:

forming a pattern of a conductive film including a gate electrode, source and drain electrodes by discharging a composition from a selected discharging outlet of a plurality of discharge outlets arranged in a uniaxial direction;

forming a non-single crystal semiconductor film and an inorganic insulating film by changing a gas into plasma and supplying the plasma from a selected discharging port of a plurality of discharging ports arranged in a uniaxial direction; and

removing a part of the non-single crystal semiconductor film or the inorganic insulating film by changing a gas into plasma and supplying the plasma from a selected discharging port of a plurality of discharging ports arranged in a uniaxial direction.

11. A method for manufacturing a display device according to claim 10 , wherein each of the step of forming the pattern of the conductive film including the gate electrode, source and drain electrodes, the step of forming the non-single crystal semiconductor film and the inorganic insulating film, and the step of removing a part of the non-single crystal semiconductor film or the insulating film is performed under an atmospheric pressure or a pressure around an atmospheric pressure.

12. A method for manufacturing a display device according to claim 10 , wherein the step of forming the pattern of the conductive film including the gate electrode, source and drain electrodes, the step of forming the non-single crystal semiconductor film and the inorganic insulating film, and the step of removing a part of the non-single crystal semiconductor film or the insulating film are performed while sending the substrate wound off from a first roll to a second roll to be reeled.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2004
From: YAMAZAKI, SHUNPEI; ARAI, YASUYUKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 015534/0476 →
Priority Claims (1)
JP 2003-028924 · Feb 5, 2003 · national
Continuity (1)
Related Publication 20040224433A1 · Nov 11, 2004