Bit end design for pseudo spin valve (PSV) devices
In a process of making a magnetoresistive memory device, a mask layout is produced by use of any suitable design tool. The mask layout is laid out in grids having a central grid forming a central section and grids forming bit end sections, and the grids of the bit end sections are rectangles. A mask is made by use of the mask layout, and the mask has stepped bit ends. The mask is used to make a magnetic storage layer having tapered bit ends, to make a magnetic sense layer having tapered bit ends, and to make a non-magnetic layer having tapered bit ends. The non-magnetic layer is between the magnetic sense layer and the magnetic storage layer.
1. A process of making a magnetoresistive memory device comprising:
making a mask having stepped bit ends;
using the mask to make a magnetic storage layer having tapered bit ends;
using the mask to make a magnetic sense layer having tapered bit ends; and,
using the mask to make a non-magnetic layer between the magnetic sense layer and the magnetic storage layer, and wherein the non-magnetic layer has tapered bit ends.
2. The process of claim 1 wherein the magnetic storage layer comprises more than one magnetic storage film.
3. The process of claim 1 wherein the magnetic storage layer comprises first and second magnetic storage films, wherein the first magnetic storage film comprises NiFe, and wherein the second magnetic storage film comprises CoFe.
4. The process of claim 1 wherein the magnetic sense layer comprises more than one magnetic sense film.
5. The process of claim 1 wherein the magnetic sense layer comprises first and second magnetic sense films, wherein the first magnetic sense film comprises NiFe, and wherein the second magnetic sense film comprises CoFe.
6. The process of claim 1 wherein the magnetic storage layer comprises more than one magnetic storage film, and wherein the magnetic sense layer comprises more than one magnetic sense film.
7. The process of claim 1 wherein the magnetic storage layer comprises first and second magnetic storage films, wherein the magnetic sense layer comprises first and second magnetic sense films, wherein the first magnetic storage film comprises NiFe, wherein the second magnetic storage film comprises CoFe, wherein the first magnetic sense film comprises NiFe, and wherein the second magnetic sense film comprises CoFe.
8. The process of claim 1 wherein the magnetic sense film comprises a ferromagnetic sense film.
9. The process of claim 1 wherein the magnetic storage film comprises a ferromagnetic storage film.
10. The process of claim 9 wherein the magnetic sense film comprises a ferromagnetic sense film.
11. The process of claim 1 wherein the using of the mask to make a magnetic storage layer having tapered bit ends, the using of the mask to make a magnetic sense layer having tapered bit ends, and the using of the mask to make a non-magnetic layer between the magnetic sense layer and the magnetic storage layer are performed in a single lithographic patterning step.
12. The process of claim 1 wherein the using of the mask to make a magnetic storage layer having tapered bit ends, the using of the mask to make a magnetic sense layer having tapered bit ends, and the using of the mask to make a non-magnetic layer between the magnetic sense layer and the magnetic storage layer are performed as separate lithographic patterning steps.
13. A process of making a magnetoresistive memory device comprising:
laying out a mask layout in grids having a central grid forming a central section and outer grids forming bit end sections, and wherein the grids of the bit end sections are rectangles;
making a mask by use of the mask layout, wherein the mask has stepped bit ends;
using the mask to make a magnetic storage layer having tapered bit ends;
using the mask to make a magnetic sense layer having tapered bit ends; and,
using the mask to make a non-magnetic layer between the magnetic sense layer and the magnetic storage layer, wherein the non-magnetic layer has tapered bit ends.
14. The process of claim 13 wherein the magnetic storage layer comprises more than one magnetic storage film.
15. The process of claim 13 wherein the magnetic storage layer comprises first and second magnetic storage films, wherein the first magnetic storage film comprises NiFe, and wherein the second magnetic storage film comprises CoFe.
16. The process of claim 13 wherein the magnetic sense layer comprises more than one magnetic sense film.
17. The process of claim 13 wherein the magnetic sense layer comprises first and second magnetic sense films, wherein the first magnetic sense film comprises NiFe, and wherein the second magnetic sense film comprises CoFe.
18. The process of claim 13 wherein the magnetic storage layer comprises more than one magnetic storage film, and wherein the magnetic sense layer comprises more than one magnetic sense film.
19. The process of claim 13 wherein the magnetic storage layer comprises first and second magnetic storage films, wherein the magnetic sense layer comprises first and second magnetic sense films, wherein the first magnetic storage film comprises NiFe, wherein the second magnetic storage film comprises CoFe, wherein the first magnetic sense film comprises NiFe, and wherein the second magnetic sense film comprises CoFe.
20. The process of claim 13 wherein the magnetic sense film comprises a ferromagnetic sense film.
21. The process of claim 13 wherein the magnetic storage film comprises a ferromagnetic storage film.
22. The process of claim 21 wherein the magnetic sense film comprises a ferromagnetic sense film.
23. The process of claim 13 wherein the using of the mask to make a magnetic storage layer having tapered bit ends, the using of the mask to make a magnetic sense layer having tapered bit ends, and the using of the mask to make a non-magnetic layer between the magnetic sense layer and the magnetic storage layer are performed in s single lithographic patterning step.
24. The process of claim 13 wherein the using of the mask to make a magnetic storage layer having tapered bit ends, the using of the mask to make a magnetic sense layer having tapered bit ends, and the using of the mask to make a non-magnetic layer between the magnetic sense layer and the magnetic storage layer are performed as separate lithographic patterning steps.