Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device
A method of producing an insulator thin film, for forming a thin film on a substrate by use of the atomic layer deposition process, includes a first step of forming a silicon atomic layer on the substrate and forming an oxygen atomic layer on the silicon atomic layer, and a second step of forming a metal atomic layer on the substrate and forming an oxygen atomic layer on the metal atomic layer, wherein the concentration of the metal atoms in the insulator thin film is controlled by controlling the number of times the first step and the second step are carried out.
1. A method of producing an insulator thin film, for forming a thin film over a substrate by use of the atomic layer deposition process, said method comprising:
forming a silicon atomic layer over said substrate, and forming an oxygen atomic layer over said silicon atomic layer; and
forming a metal atomic layer over said substrate, and forming an oxygen atomic layer over said metal atomic layer, and wherein the layers are formed such that a concentration ratio of metal/(metal+silicon) changes through the thin film.
2. A method of producing an insulator thin film as set forth in claim 1 , wherein
the concentration of said metal atoms in said insulator thin film is controlled by controlling the number of times said first step and said second step are carried out.
3. A method of producing an insulator thin film as set forth in claim 1 , wherein
nitrogen is added to said insulator thin film in the condition where a plasma is generated in an atmosphere containing nitrogen.
4. A method of producing an insulator thin film as set forth in claim 3 , wherein
said plasma is generated by electric discharge through use of a pulse power source.
5. A method of producing an insulator thin film as set forth in claim 1 , wherein
said insulator thin film is annealed in an inert atmosphere.
6. The method of producing an insulator thin film according to claim 1 , wherein the layers are formed such that a concentration ratio of metal/(metal+silicon) gradually increases and decreases through the film thickness.
7. The method of manufacturing a semiconductor device according to claim 1 , wherein the layers are formed such that a concentration ratio of metal/(metal+silicon) gradually increases and decreases through the film thickness.
8. A method of manufacturing a semiconductor device, comprising the step of forming an insulator thin film, wherein
said insulator thin film forming comprises:
forming a silicon atomic layer over a substrate and forming an oxygen atomic layer over said silicon atomic layer, by use of the atomic layer deposition process; and
forming a metal atomic layer over said substrate and forming an oxygen atomic layer over said metal atomic layer, by use of the atomic layer deposition process, and wherein the layers are formed such that a concentration ratio of metal/(metal+silicon) changes through the thin film.
9. A method of manufacturing a semiconductor device as set forth in claim 8 , wherein
the concentration of said metal atoms in said insulator thin film is controlled by controlling the number of times said first step and said second step are carried out.
10. A method of manufacturing a semiconductor device as set forth in claim 8 , wherein
nitrogen is added to said insulator thin film.
11. A method of manufacturing a semiconductor device as set forth in claim 8 , wherein
said insulator thin film is annealed in an inert atmosphere.