Semiconductor memory
In order to give all memory blocks the same structure, a redundancy word line and a redundancy bit line are formed in each memory block. A redundancy column selection line is wired in common to the memory blocks. Column redundancy circuits are formed to correspond to respective memory groups each of which consists of a prescribed number of memory blocks, and become effective according to enable signals. A column redundancy selection circuit activates an enable signal according to a block address signal when all row hit signals are deactivated. When one of the row hit signals is activated, the column redundancy selection circuit activates the enable signal corresponding to the activated row hit signal. Since the column redundancy circuit for an arbitrary memory group can be made effective according to the row hit signals, failure relief efficiency can be increased without deteriorating the electric characteristic during an access operation.
1. A semiconductor memory comprising:
a plurality of memory blocks each of which includes a real cell array having a plurality of real memory cells arranged in matrix form, a row redundancy cell array having a plurality of row redundancy memory cells arranged in a row direction and a redundancy word line connected to said row redundancy memory cells, and a column redundancy cell array having a plurality of column redundancy memory cells arranged in a column direction and a redundancy bit line connected to said column redundancy memory cells;
a plurality of redundancy column switches connecting redundancy bit lines to a data bus line;
a redundancy column selection line connected to said redundancy column switches to allow said redundancy column switches to operate, and wired in common to said memory blocks;
a plurality of row redundancy circuits each of which is formed so as to correspond to said redundancy word line, receiving an external row address signal, and activating a row hit signal to select a corresponding redundancy word line when a received external row address signal coincides with a defective row address programmed in advance;
a plurality of column redundancy circuits formed so as to correspond to respective memory groups each having a prescribed number of said memory blocks, each of the column redundancy circuits operating when activated in response to a corresponding enable signal, receiving an external column address signal, and activating a column hit signal to select said redundancy column selection line when a received external column address signal coincides with a defective column address programmed in advance; and
a column redundancy selection circuit receiving row hit signals and a block address signal to select said memory groups, activating the enable signal corresponding to a column redundancy circuit of one of said memory groups indicated by said block address signal when all of said row hit signals are deactivated, and activating the enable signal to activate the column redundancy circuit of one of said memory groups corresponding to an activated row hit signal when any one of said row hit signals is activated.
2. The semiconductor memory according to claim 1 , wherein
said column redundancy selection circuit comprises a plurality of address decoders which are formed so as to correspond to the respective memory groups and output respective enable signals, in which
each of said address decoders includes:
a decoder part activating said enable signal in response to either one of activation of said block address signal and a row hit signal corresponding; and
a reset part fixing an output node for said enable signal of said decoder part at a deactivation level in response to activation of a row hit signal not corresponding.
3. A semiconductor memory comprising:
a plurality of memory blocks each of which includes a real cell array having a plurality of real memory cells arranged in matrix form and a real word line connected to said real memory cells, a row redundancy cell array having a plurality of row redundancy memory cells arranged in a row direction and a redundancy word line connected to said row redundancy memory cells, and a column redundancy cell array having a plurality of column redundancy memory cells arranged in a column direction and a redundancy bit line connected to said column redundancy memory cells;
a plurality of redundancy column switches connecting redundancy bit lines to a data bus line;
a redundancy column selection line connected to said redundancy column switches to allow said redundancy column switches to operate, and wired in common to said memory blocks;
a plurality of row redundancy circuits each of which is formed so as to correspond to said redundancy word line, receiving an external row address signal, and activating a row hit signal to select a corresponding redundancy word line and activating a global row hit signal to prohibit selection of said real word line when a received external row address signal coincides with a defective row address programmed in advance;
a global row hit signal line wired in common to said memory blocks to transmit said global row hit signal;
a pair of column redundancy circuits which are formed so as to correspond to a pair of memory groups, respectively, each having a prescribed number of said memory blocks, each of the column redundancy circuits operating when activated in response to a corresponding enable signal, receiving an external column address signal, and activating a column hit signal to select said redundancy column selection line when a received external column address signal coincides with a defective column address programmed in advance; and
a column redundancy selection circuit receiving said global row hit signal, a close row hit signal which is said row hit signal from one of said row redundancy circuits corresponding to one of said memory groups located relatively near by, and a block address signal to select said memory groups, activating an enable signal corresponding to a column redundancy circuit of one of said memory groups indicated by said block address signal when said global row hit signal and said close row hit signal are deactivated, activating the enable signal to activate a column redundancy circuit of one of said memory groups corresponding to said close row hit signal when said close row hit signal is activated, and activating the enable signal that activates the column redundancy circuit of one of said memory groups not corresponding to said close row hit signal when said close row hit signal is deactivated and said global row hit signal is activated.
4. The semiconductor memory according to claim 3 , wherein
said column redundancy selection circuit comprises a pair of address decoders which are formed so as to correspond to the respective memory groups and output the respective enable signals, in which
one of said address decoders corresponding to one of said memory groups located relatively nearby includes:
a decoder part activating a corresponding enable signal in response to one of activation of said block address signal and said close row hit signal; and
a reset part fixing an output node for the corresponding enable signal at a deactivation level in response to deactivation of said close row hit signal and activation of said global row hit signal, and
one of said address decoders corresponding to another one of said memory groups distantly located includes:
a decoder part activating a corresponding enable signal according to said block address signal or in response to deactivation of said close row hit signal and activation of said global row hit signal; and
a reset part fixing an output node for the corresponding enable signal at a deactivation level in response to activation of said close row hit signal.