Active matrix of thin-film transistors (TFT) for an optical sensors or display screen
The invention relates to an active matrix of thin-film transistors or TFTs for an optical sensor, comprising a matrix of transistors formed on a substrate comprising a gate, a drain and a source, a set of rows and a set of columns that are connected to the gates and to an electrode of the transistor, respectively, pixel electrodes and, according to the invention, a set of capacitive electrodes lying at the same level as the electrodes of the transistors so as to form, with the pixel electrodes, storage capacitors.
1. An active matrix of thin-film transistors (TFTs) for an optical sensor or display screen, comprising:
a substrate;
a matrix of TFT transistors formed on the substrate, each TFT comprising a gate, a first electrode or drain and a second electrode or source;
a set of row electrodes placed on the substrate for controlling the TFTs via the gates;
a conducting level in a defined pattern forming a matrix of pixel electrodes being connected to one of the electrodes of the TFTs;
a set of columns configured to transfer charges through the TFTs between the pixel electrodes and drive electronics, the columns being connected to the other electrode of the TFTs; and
an insulating layer between the pixel electrodes and the columns, the insulating layer being open locally to each pixel in order to bring the pixel electrode into contact with the other electrode of the TFT;
a set of capacitive electrodes lying at the same level as the electrodes of the TFTs so as to form, with the pixel electrodes, storage capacitors, additional storage lines lying at the same level as the gates of the TFTs and parallel to the columns, the additional storage lines forming, with the capacitive electrodes, storage capacitors.
2. The matrix as claimed in claim 1 , wherein the capacitive electrodes are produced in a same material as the source and drain electrodes of the TFTs.
3. The matrix as claimed in claim 1 , wherein the capacitive electrodes are connected so as to form storage lines parallel to the columns.
4. The matrix as claimed in claim 3 , wherein the set of storage lines is connected to a same potential.
5. The matrix as claimed in claim 3 , including connections forming a bridge for connecting the storage lines so as to produce a ground plane.
6. The matrix as claimed in claim 1 , wherein the additional storage lines are produced in a same material as the gates of the TFTs.
7. The matrix as claimed in claim 1 , including a photosensitive semiconductor layer in contact with the pixel electrodes configured to convert the electromagnetic radiation into electrical charges picked up by the electrodes.
8. An optical sensor, in particular for X-rays, comprising an active matrix as claimed in claim 7 .
9. An optical sensor, in particular for X-rays, comprising an active matrix as claimed in claim 1 .
10. The matrix as claimed in claim 1 , comprising a layer of liquid crystal, with a back electrode and with a transparent substrate.
11. A display screen of the reflective or transflective type, comprising an active matrix as claimed in claim 1 .
12. The active matrix according to claim 1 , wherein the pixel electrodes are connected to the one of the electrodes of the TFTs by a connection formed in the insulating layer between the pixel electrodes and the one of the electrodes of the TFTs.
13. The active matrix according to claim 1 , wherein the only layer between the pixel electrodes and the capacitive electrodes is the insulating layer.
14. The active matrix according to claim 1 , wherein the planar elements are connected to each other via bridges, the bridges passing over or under the first electrode or drain.