Materials and method to seal vias in silicon substrates
View Patent ↗Sealing a via using a soventless, low viscosity, high temperature stable polymer or a high solids content polymer solution of low viscosity, where the polymeric material is impregnated within the via at an elevated temperature. A supply chamber is introduced to administer the polymeric material at an elevated temperature, typically at a temperature high enough to liquefy the polymeric material. The polymeric material is introduced through heated supply lines under force from a pump, piston, or a vacuum held within said supply chamber.
1. A semiconductor chip package assembly comprising:
a silicon substrate;
at least one semiconductor chip;
at least one electrically conductive via in said silicon substrate having at least one exposed end and porous material filled therein; and
a sealant reflowed into and infiltrating within said porous material of said at least one electrically conductive via, and sealing said porous material, said sealant including a polymeric material.
2. The semiconductor chip package assembly of claim 1 wherein said polymeric material includes a polyimide material or a high thermally stable, thermally curable material.
3. The semiconductor chip package assembly of claim 1 wherein said polymeric material includes a polyimide precursor solution.
4. The semiconductor chip package assembly of claim 3 wherein said polyimide precursor solution includes a high percentage concentration of solids having viscosity approximately lcP to approximately 150 cP.
5. The semiconductor chip package assembly of claim 2 wherein said polyimide material is neat thermally curable material with low viscosity and low melting point in its precursor state.
6. The semiconductor chip package assembly of claim 2 wherein said thermally stable, thermally curable material includes a polyamidoamine material, PMDA-ODA, BPDA-PDA, or PI2562.
7. The semiconductor chip package assembly of claim 1 wherein said sealant includes a deposited copper coating.