IP Library Granted Patent US 7,202,153
Granted Patent B2
US 7,202,153 · App. 10/914,578 · Granted Apr 10, 2007

Method for forming, under a thin layer of a first material, portions of another material and/or empty areas

Assignees: STMicroelectronics S.A.; Commissariat a l'Ernergie, Atomique
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Quick Facts
Patent No.
US 7,202,153
App. No.
10/914,578
Granted
Apr 10, 2007
Kind
B2
Abstract

A method for forming a empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material; and removing the portion of the photosensitive layer.

Claims (9)

1. A method for forming an interconnect network comprising:

covering a substrate with a stacking of a first insulating layer, of a first photosensitive layer, and of a second insulating layer;

forming openings in the stacking;

filling the openings in the stacking with a conductive material to form contacts;

covering the second insulating layer and the contacts with a second photosensitive layer;

insolating, with an electron beam crossing the second insulating layer, several pairs of portions of the photosensitive layers or their complements according to whether the photosensitive layers are positive or negative, each pair comprising a first portion of the first photosensitive layer and a second portion of the second photosensitive layer, first and second portions of each pair being superposed;

removing said pairs of portions of the photosensitive layers; and

filling with a conductive material the space previously taken up by the second portions of each of the pairs located above the second insulating layer.

2. The method of claim 1 , wherein the removal of said first portions of each of the pairs is performed by means of a plasma, said first portions volatilizing after transformation in crossing said second insulating layer.

Assignments (2)
CHANGE OF NAME Recorded Jan 21, 2024
From: STMICROELECTRONICS SA
To: STMICROELECTRONICS FRANCE
Reel/Frame 066357/0435 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 9, 2004
From: CORONEL, PHILIPPE; LAPLANCHE, YVES; PAIN, LAURENT
To: STMICROELECTRONICS, S.A.; COMMISSARIAT A L'ERNERGIE ATOMIQUE
Reel/Frame 015675/0220 →
Priority Claims (1)
FR 03 50425 · Aug 12, 2003 · national
Continuity (1)
Related Publication 20050037603A1 · Feb 17, 2005