Semiconductor device having misfet gate electrodes with and without GE or impurity and manufacturing method thereof
View Patent ↗The performance and reliability of a semiconductor device are improved. In a semiconductor device having a CMISFET, a gate electrode of an n channel MISFET is composed of a nickel silicide film formed by reacting a silicon film doped with P, As, or Sb with an Ni film, and a gate electrode of a p channel MISFET is composed of a nickel-silicon-germanium film formed by reacting a nondope silicon germanium film with the Ni film. The work function of the gate electrode of the n channel MISFET is controlled by doping P, As, or Sb, and the work function of the gate electrode of the p channel MISFET is controlled by adjusting the Ge concentration.
1. A semiconductor device, comprising:
an n channel first MISFET; and
a p channel second MISFET,
wherein a first gate electrode of said first MISFET is composed of a first conductive film made of Si and Ni,
a second gate electrode of said second MISFET is composed of a second conductive film made of at least one of Si and Ge and Ni,
said first conductive film is made of nickel silicide containing no Ge, and
said second conductive film is made of Ni y Si 1−x Ge x containing Ge.
2. A manufacturing method of a semiconductor device having an n channel first MISFET and a p channel second MISFET, comprising the steps of:
(a) preparing a semiconductor substrate;
(b) forming a first insulating film for a gate insulating film on said semiconductor substrate;
(c) forming a first dummy electrode of said first MISFET composed of a patterned silicon film on said first insulating film, and forming a second dummy electrode of said second MISFET composed of a patterned silicon germanium film on said first insulating film;
(d) forming a metal film mainly made of nickel on said first dummy electrode and said second dummy electrode; and
(e) forming a first gate electrode of said first MISFET made of nickel silicide by reacting said silicon film constituting said first dummy electrode with said metal film, and forming a second gate electrode of said second MISFET made of Ni y Si 1−x Ge x by reacting said silicon germanium film constituting said second dummy electrode with said metal film,
wherein said silicon film is a silicon film doped with at least one of P, As, and Sb, and
said silicon germanium film is a silicon germanium film in which no impurity is introduced.