Semiconductor integrated circuit device
There is disclosed a semiconductor integrated circuit device capable of eliminating an influence of a power voltage drop generated in a circuit disposed in the semiconductor integrated circuit device to inhibit an operation defect or an operation speed decrease of the circuit. In a semiconductor integrated circuit device 10 including a power wiring 18 connected to a power supply (Vdd) via a power terminal 12, a ground wiring 20 connected to a ground (0 V) via a ground terminal 14, and a plurality of circuits 301 to 30 f connected in parallel with one another between the power wiring 18 and the ground wiring 20, a negative power terminal 16 connected to a negative power supply (−Vdd) is disposed, and a current source 22 is disposed as a current generating section between the negative power terminal 16 and a node Gf on a ground wiring 20 side of the f-th circuit 30 f disposed in a region most distant from the ground.
1. A semiconductor integrated circuit device comprising:
a power wiring having a first terminal connected to a first power supply of a first polarity;
a ground wiring distinct from said power wiring, and having a first terminal connected to a ground; and
a plurality of circuits connected in parallel between the power wiring and the ground wiring,
wherein the ground wiring has a second terminal connected to a current generating section for generating a predetermined current in said ground wiring in a state in which the current generating section is connected to a second power supply of a second polarity opposite to said first polarity.
2. A semiconductor integrated circuit device comprising:
a power wiring having a first terminal connected to a first power supply of a first polarity;
a ground wiring distinct from said power wiring, having a first terminal connected to a ground and having a second terminal;
a plurality of circuits connected in parallel between the power wiring and the ground wiring; and
a current generating section having a first terminal connected to the second terminal of the ground wiring to generate a predetermined current in said ground wiring in a state in which a second terminal of the current generating section is connected to a second power supply of a second polarity opposite to said first polarity.
3. A semiconductor integrated circuit device comprising:
a power wiring having a first terminal connected to a first power supply of a first polarity;
a ground wiring distinct from said power wiring, and having a first terminal connected to a ground;
a plurality of circuits connected in parallel between the power wiring and the ground wiring;
a second power supply of a second polarity opposite to said first polarity; and
a current generating section having a first terminal connected to the ground wiring and having a second terminal connected to the second power supply to generate a predetermined current in said ground wiring.
4. The semiconductor integrated circuit device according to claim 1 , wherein the second terminal of said ground wiring connected to said current generating section is disposed in a second portion of said ground wiring most distant from a first portion of said ground wiring in which a ground potential is supplied to the ground wiring via said first terminal of said ground wiring.
5. The semiconductor integrated circuit device according to claim 1 , wherein the current generating section is either one of a current source or an operating circuit which consumes a predetermined current to operate.
6. The semiconductor integrated circuit device according to claim 5 , wherein the operating circuit which consumes the predetermined current to operate is a clock generator which outputs a clock signal.
7. The semiconductor integrated circuit device according to claim 6 , wherein the clock generator is connected to a level shifter for converting a level of the outputted clock signal to supply the clock signal to the plurality of circuits.