IP Library Granted Patent US 7,205,576
Granted Patent B2
US 7,205,576 · App. 10/930,915 · Granted Apr 17, 2007

Light emitting device and method of manufacturing the same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,205,576
App. No.
10/930,915
Granted
Apr 17, 2007
Kind
B2
Abstract

A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

Claims (7)

1. A light emitting device having a light emitting layer between an n-type clad layer and a p-type clad layer, the light emitting device comprising:

a reflective layer reflecting the light emitted from the light emitting layer; and an ohmic contact layer formed by adding an additional element to an indium oxide between the reflective layer and the p-type clad layer, wherein the thickness of the ohmic contact layer is 0.1–20 nm.

2. The light emitting device of claim 1 , wherein the additional element includes at least one element selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and lanthanide.

3. The light emitting device of claim 1 , wherein the additional element is added in an amount of 0.1–49 atomic percent of the indium oxide.

4. The light emitting device of claim 1 , wherein the reflective layer is formed of one selected from the group consisting of Rh, Ag, and Zn.

5. The light emitting device of claim 1 , wherein a substrate is formed in the lower part of the n-type clad layer and is formed of a material that can transmit light.

6. The light emitting device of claim 5 , wherein the substrate is made of sapphire.

Assignments (3)
MERGER Recorded Aug 7, 2012
From: SAMSUNG LED CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028744/0272 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2010
From: SAMSUNG ELECTRONICS CO., LTD.; GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
To: SAMSUNG LED CO., LTD.; GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
Reel/Frame 024151/0462 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 1, 2004
From: SONG, JUNE-O; LEEM, DONG-SEOK; SEONG, TAE-YEON
To: SAMSUNG ELECTRONICS CO., LTD.; GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
Reel/Frame 015783/0907 →
Priority Claims (1)
KR 10-2003-0062830 · Sep 8, 2003 · national
Continuity (1)
Related Publication 20050051783A1 · Mar 10, 2005