Patent Assignment
Reel/Frame 024151/0462
Assignment of Assignor's Interest
Recorded: 2010-03-30
Pages: 4
Assignors
SAMSUNG ELECTRONICS CO., LTD.
Executed: 2010-03-30
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
Executed: 2010-03-30
Assignees
SAMSUNG LED CO., LTD.
314, MAETAN 3-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
1 ORYONG-DONG, BUK-GU, GWANGJU-SHI, KOREA, REPUBLIC OF
Covered Properties
(9)
Thin Film Electrode for Forming Ohmic Contact in Light Emitting Diodes and Laser Diodes Using Nickel-Based Solid Solution for Manufacturing High Performance Gallium Nitride-Based Optical Devices, and Method for Fabricating the Same
Nitride-Based Light Emitting Device, and Method of Manufacturing the Same
Light Emitting Device and Method of Manufacturing the Same
Nitride-Based Light Emitting Device and Method of Manufacturing the Same
Flip-Chip Light Emitting Diode and Method of Manufacturing the Same
Nitride-Based Light-Emitting Device Having Grid Cell Layer
Thin Film Electrode for Forming Ohmic Contact in Light Emitting Diodes and Laser Diodes Using Nickel-Based Solid Solution for Manufacturing High Performance Gallium Nitride-Based Optical Devices, and Method for Fabricating the Same
Nitride-Based Light Emitting Device and Method of Manufacturing the Same
Light Emitting Device and Method of Manufacturing the Same
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.