Semiconductor device and method of manufacturing the same
Die pads 50, 51, an external connecting electrode 52 and a bridge are covered with an insulating resin after half-etching, formed into a single package without a coupling member such as a supporting lead or adhesive tape. In addition, since no supporting board is required, a low-profile semiconductor device with improved heat radiation can be provided.
1. A semiconductor device comprising:
a first and a second semiconductor chip which are electrically connected to each other;
a first die pad to which said first semiconductor chip is fixed;
a second die pad to which said second semiconductor chip is fixed;
at least one bridge electrically connecting said first and said second semiconductor chip;
external connecting electrodes provided to surround areas where said first and said second semiconductor chip are located, at least a portion of the rear surface of them serving as an electrode to be externally connected;
first metallic wires which electrically connect said first and said second semiconductor chip to said external connecting electrodes, respectively;
second metallic wires which electrically connect said first semiconductor chip, said at least one bridge and said second semiconductor chip; and
insulating resin which seals said first and said second semiconductor chip, said external connecting electrode, and said first and said second metallic wires,
wherein said insulating resin separates said first and second die pad, said at least one bridge and said external connecting electrodes from one another, and said second metallic wires are coupled to said first and said second semiconductor chip using a ball bond and coupled to said at least one bridge using a stitch bond,
further comprising a plurality of recesses in a rear surface of said insulating resin, the rear surface of said first and second die pad and said external connecting electrodes being exposed within said recesses, wherein the at least one bridge is exposed within at least one of the recesses;
wherein a rear surface of the at least one bridge is recessed relative to the rear surface of the insulating resin;
wherein the rear surface of the at least one bridge is covered by an insulating film; and
wherein an entire rear surface of the semiconductor device is covered by an insulating film except for a part of the rear surface that is an external connecting electrode.
2. The semiconductor device according to claim 1 , wherein said recesses are formed by a portion of the rear surface of said insulating resin of which a back surface protrudes from the rear surface of said first and said second die pad and said external connecting electrodes.
3. The semiconductor device of claim 1 wherein the at least one bridge is arranged between said first and second semiconductor chips.