Complementary metal oxide semiconductor image sensor layout structure
A complementary metal oxide semiconductor (CMOS) image sensor layout structure is described. The CMOS image sensor layout structure includes a substrate, a plurality of light sensing devices, a plurality of transistors and a plurality of color-filtering film layers. The substrate has a pixel array region comprising a plurality of pixels. Each pixel has a light sensing region and an active device region. The pixels are isolated from one another by isolation structures and the light sensing regions have different sizes. The light sensing devices are defined separately within the respective light sensing regions. The transistors are disposed within the respective active device region. The color-filtering film layers are disposed separately above the pixels to form a color-filtering array.
1. A complementary metal oxide semiconductor (CMOS) image sensor layout structure, comprising:
a substrate having a pixel array region thereon, wherein the pixel array region comprises a plurality of pixels each having a light sensing region and an active device region, the pixels are isolated from one another by isolation structures and the light sensing regions have different sizes;
a plurality of light sensing devices defined separately within each light sensing region;
a plurality of transistors disposed inside each active device region; and
a plurality of color-filtering film layers disposed separately above corresponding pixels to form a color-filtering array (CFA).
2. The CMOS image sensor layout structure of claim 1 , wherein the size of each pixel is equivalent.
3. The CMOS image sensor layout structure of claim 1 , wherein the color-filtering array is organized into a Bayer patter, the Bayer pattern comprising:
a first color and a second color repeatedly disposed in the odd column of the color-filtering array; and
a third color and the first color repeatedly disposed in the even column of the color filtering array.
4. The CMOS image sensor layout structure of claim 3 , wherein the first color is green, the second color is red and the third color is blue.
5. The CMOS image sensor layout structure of claim 4 , wherein every group of four pixels comprises a red pixel, two green pixels and a blue pixel.
6. The CMOS image sensor layout structure of claim 5 , wherein the size of the light sensing region within each pixel is arranged such that the light sensing region of the blue pixel is greater than the light sensing region of the green pixel and the light sensing region of the green pixel is greater than the light sensing region of the red pixel.
7. The CMOS image sensor layout structure of claim 6 , wherein the two green pixels use a common active device region.
8. The CMOS image sensor layout structure of claim 1 , wherein the light sensing device comprising a photodiode.
9. The CMOS image sensor layout structure of claim 1 , wherein the CMOS image sensor further comprising a plurality of micro-lenses disposed separately over corresponding color-filtering film layers.