Method for synthesizing nanoscale structures in defined locations
View Patent ↗A method is disclosed for directly synthesizing nanoscale structures, particularly in defined locations. The method overcomes problems in nanoscale manufacturing by enabling the direct fabrication of composites useful for constructing electronic devices. In one aspect of the method, nanotubes and arrays of nanotubes are synthesized directly at defined locations useful for constructing electronic devices.
1. A composite, comprising:
a substrate;
a pillar formed on the substrate at a selected location comprising an insulating, semiconducting or conducting material, the pillar further comprising a catalyst; and
a nanoscale structure formed on the pillar, wherein the substrate comprises plastic, silicon nitride, quartz, or mica, or combinations thereof, the pillar comprises Pt, Au, Fe, Ni, Ti, or combinations thereof, and the nanoscale structure comprises zinc oxide, cadmium sulfide, silicon dioxide, or combinations thereof.
2. The composite according to claim 1 where the nanoscale structure comprises a nanotube.
3. The composite according to claim 2 where the nanotube is a carbon nanotube.
4. The composite according to claim 1 where the pillar comprises a semiconducting material.
5. The composite according to claim 1 where the pillar comprises a metal selected from the group consisting of W, Pt, Au, Al, Fe, Ni, Ti, Ta, Cu, and combinations thereof.
6. The composite according to claim 1 where the pillar is electrically connected to an electronic device.
7. The composite according to claim 1 further comprising a catalyst deposited on the pillar for synthesis of the nanoscale structure.
8. The composite according to claim 1 where the substrate is silicon, and the pillar is platinum.
9. The composite according to claim 3 where the nanotube has a diameter of from about 1 to about 200 nm.
10. The composite according to claim 3 where the nanotube has a diameter of from about 1 to about 100 nm.
11. The composite according to claim 1 where the composite forms a field emitter device where the pillar comprises a tungsten tip and a nanotube is formed on the tip.
12. The composite according to claim 11 where the device has a single field emitter.
13. The composite according to claim 12 where the nanoscale structure is a nanotube having a diameter of from about 10 to about 1000 nm.
14. The composite according to claim 1 where the composite forms a device having at least two terminals.
15. The composite according to claim 14 where the composite forms a transistor.
16. The composite according to claim 15 where the nanoscale structure is a nanotube having a diameter of from about 1 about 10 nm.
17. The composite according to claim 1 where the substrate includes at least one of a metal, ceramic, plastic or a semiconductor.
18. The composite according to claim 1 where the substrate includes at least one of silicon, silicon nitride, quartz and mica.
19. The composite according to claim 1 where the nanoscale structure comprises at least one of carbon, zinc oxide, cadmium sulfide and silicon dioxide.
20. The composite according to claim 19 where the nanoscale structure is a ZnO nanowire.
21. The composite according to claim 20 where the ZnO nanowire functions as a field emitter.
22. The composite according to claim 1 , further comprising plural pillars arranged on the substrate in a selected pattern; and plural nanoscale structures formed on the pillars.
23. The composite according to claim 22 where at least one pillar forms an electrical connection to a circuit formed on the substrate.
24. The composite according to claim 22 where the pillars have a width of from about 10 nm to about 1 μm.
25. The composite according to claim 22 where the plural nanoscale structures form a field emitter device.
26. The composite according to claim 22 where each pillar is associated with one pixel in a flat panel display.
27. The composite according to claim 26 where a single carbon nanotube is formed on each pillar.
28. The composite according to claim 27 where the nanotubes have a diameter of from about 1 to about 200 nm.
29. The composite according to claim 26 where a single ZnO nanowire is formed on each pillar.
30. The composite of claim 1 wherein the pillar comprises a first material and the substrate comprises a second material.