Methods for forming wiring and manufacturing thin film transistor and droplet discharging method
View Patent ↗It is required that a line width of a wiring is prevented from being wider to be miniaturized when the wiring or the like is formed by a dropping method typified by an ink-jetting method. The invention provides a method for narrowing (miniaturizing) a line width according to a method different from a conventional method. One feature of the invention is that a plasma treatment is performed before forming a wiring or the like by a dropping method typified by an ink-jetting method. As the result of the plasma treatment, a surface for forming a conductive film is modified to be liquid-repellent. Consequently, a wiring or the like formed by a dropping method can be miniaturized.
1. A method for manufacturing a thin film transistor comprising: performing a plasma treatment on a surface for forming a gate electrode to form a first liquid-repellent region;
dropping a composition including a material of the gate electrode to form the gate electrode on the first liquid-repellent region of the surface for forming the gate electrode;
performing a plasma treatment on a surface for forming source and drain electrodes to be a second liquid-repellent; and
dropping a composition including a material of the source and drain electrodes to form the source and drain electrodes on the second liquid-repellent region of the surface for forming the source and drain electrodes.
2. A method for manufacturing a thin film transistor comprising:
performing a plasma treatment on a substrate to form a first liquid-repellent region;
dropping a composition including a material of the gate electrode to form a gate electrode on the first liquid-repellent region of the substrate;
forming a gate insulating film to cover the gate electrode;
forming a semiconductor film over the gate electrode;
forming a semiconductor film having one conductivity over the semiconductor film;
performing a plasma treatment on the semiconductor film having one conductivity and the gate insulating film to form a second liquid-repellent region;
dropping a composition including a material of source and drain electrodes to form the source and drain electrodes on the second liquid-repellent region of the semiconductor film having one conductivity and the gate insulating film.
3. A method for manufacturing a thin film transistor comprising:
forming source and drain electrodes;
forming a semiconductor film over the source and drain electrodes;
performing a plasma treatment on a surface for forming a gate electrode over the semiconductor film to form a liquid-repellent region; and
dropping a composition including a material of the gate electrode to form the gate electrode on the liquid-repellent region of the surface for forming the gate electrode.
4. A method for manufacturing a thin film transistor comprising:
forming source and drain electrodes over a base film;
forming a semiconductor film over the source and drain electrodes;
performing a plasma treatment on a surface of the semiconductor film to form a first liquid-repellent region;
dropping a composition including a material of a mask to forming the mask on the first liquid-repellent region of the semiconductor film;
patterning the semiconductor film by using the mask; forming a gate insulating film to cover the semiconductor film;
performing a plasma treatment on the gate insulating film to form a second liquid-repellent region;
dropping a composition including a material of a gate electrode to form the gate electrode on the second liquid repellent region of the gate insulating film.
5. A method for manufacturing a thin film transistor comprising:
performing a plasma treatment on a base film to form a first liquid-repellent region;
dropping a composition including a material of source and drain electrodes to form the source and drain electrodes on the first liquid-repellent region of the base film;
forming a semiconductor film over the source and drain electrodes;
performing a plasma treatment on the semiconductor film to form a second liquid-repellent region;
dropping a composition including a material of a mask to forming the mask on the second liquid-repellent region of the semiconductor film;
patterning the semiconductor film by using the mask;
forming a gate insulating film to cover the semiconductor film;
performing a plasma treatment on the gate insulating film to form a third liquid-repellent region; and
dropping a composition including a material of a gate electrode to form the gate electrode on the third liquid-repellent region of the gate insulating film.
6. A method for manufacturing a thin film transistor comprising:
forming a Teflon film;
dropping a composition including a material of a gate electrode to form the gate electrode over the Teflon film;
performing a heat treatment so as to bake the gate electrode; and
removing the Teflon film by the heat treatment.
7. A method for manufacturing a thin film transistor comprising:
forming a first Teflon film;
dropping a composition including a material of a gate electrode to form the gate electrode over the first Teflon film;
performing a heat treatment so as to bake the gate electrode;
removing the first Teflon film by the heat treatment;
forming a gate insulating film to cover the gate electrode;
forming a semiconductor film over the gate electrode;
forming a semiconductor film having one conductivity over the semiconductor film;
forming a second Teflon film over the semiconductor film having one conductivity and the gate insulating film;
dropping a composition including a material of source and drain electrodes to form the source and drain electrodes over the semiconductor film having one conductivity and the gate insulating film;
performing a heat treatment so as to bake the source and drain electrodes; and
removing the second Teflon film by the heat treatment.
8. The method for manufacturing a thin film transistor according to any one of claims 1 , 2 , 3 , 4 , 5 , 6 , and 7 , comprising:
forming an interlayer insulating film over the thin film transistor;
forming an opening in the interlayer insulating film;
performing a plasma treatment on the interlayer insulating film in winch the opening is formed so that the opening and a surface of the interlayer insulating film become liquid-repellent; and
dropping a composition including a material of a wiring to form the wiring to be connected to the source or drain electrodes of the thin film transistor though the opening.
9. The method for manufacturing a thin film transistor according to any one of claims 1 , 2 , 3 , 4 , 5 , 6 , and 7 , comprising:
forming an interlayer insulating film over the thin film transistor;
performing a plasma treatment on the interlayer insulating film so that a surface of the interlayer insulating film become liquid-repellent;
forming an opening in the interlayer insulating film; and
dropping a composition including a material of a wiring to form the wiring to be connected to the source electrode or drain electrode of the thin film transistor through the opening;
wherein the opening is less liquid-repellent than the surface of the interlayer insulating film.
10. The method for forming a wiring according to any one of claims 1 , 2 , 3 , 4 , 5 , 6 , and 7 , wherein the composition is dropped by an ink-jetting method.