Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.
1. A method for forming a tantalum-containing material on a substrate surface, comprising:
heating a tantalum precursor comprising TAIMATA to a predetermined temperature to form a tantalum-containing gas;
flowing the tantalum-containing gas into a process chamber containing a substrate therein;
adsorbing the tantalum-containing gas on the substrate to form a tantalum-containing precursor layer;
purging the process chamber with a purge gas;
flowing at least one secondary element-containing gas into the process chamber;
reacting the at least one secondary element-containing gas with the tantalum-containing precursor layer to form a tantalum barrier layer on the substrate; and
purging the process chamber with the purge gas.
2. The method of claim 1 , wherein the predetermined temperature of the tantalum precursor is within a range from about 50° C. to about 80° C.
3. The method of claim 2 , wherein the substrate is heated to a temperature within a range from about 250° C. to about 400° C.
4. The method of claim 1 , wherein the at least one secondary element-containing gas comprises a reagent selected from the group consisting of a nitrogen precursor, silicon precursor, a boron precursor, a phosphorous precursor, and combinations thereof.
5. The method of claim 4 , wherein a nitrogen precursor is selected from the group consisting of ammonia, atomic nitrogen, hydrazine, methylhydrazine, dimethylhydrazine, derivatives thereof, and combinations thereof.
6. The method of claim 4 , wherein a silicon precursor is selected from the group consisting of silane, disilane, methylsilane, hexamethyldisilane, tetrachlorosilane, hexach lorodisilane, derivatives thereof, and combinations thereof.
7. The method of claim 4 , wherein the tantalum barrier layer is formed having a thickness within a range from about 10 Å to about 30 Å.
8. The method of claim 7 , wherein a metal layer is deposited on the tantalum barrier layer, and the metal layer comprises a metal selected from the group consisting of copper, tungsten, aluminum, tantalum, titanium, ruthenium alloys thereof, combinations thereof.
9. A method for forming a tantalum-containing material on a substrate surface, comprising:
forming a tantalum-containing gas by heating a liquid TAIMATA precursor contained within a vaporizer to a predetermined temperature, while flowing a carrier gas through the vaporizer;
exposing a substrate within a process chamber to an atomic layer deposition process comprising a pulse of the tantalum-containing gas, a pulse of a nitrogen-containing gas, and a pulse of a silicon-containing gas; and
forming a tantalum barrier layer having a predetermined thickness by repeating the atomic layer deposition process.
10. The method of claim 9 , wherein the predetermined temperature of the liquid TAIMATA precursor is within a range from about 50° C. to about 80° C.
11. The method of claim 10 , wherein the substrate is heated to a temperature within a range from about 250° C. to about 400° C.
12. The method of claim 9 , wherein the nitrogen-containing gas comprises a nitrogen precursor selected from the group consisting of ammonia, atomic nitrogen, hydrazine, methylhydrazine, dimethylhydrazine, derivatives thereof, and combinations thereof.
13. The method of claim 12 , wherein the silicon-containing gas comprises a silicon precursor selected from the group consisting of silane, disilane, methylsilane, hexamethyldisilane, tetrachlorosilane, hexachlorodisilane, derivatives thereof, and combinations thereof.
14. The method of claim 13 , wherein the predetermined thickness of the tantalum barrier layer is within a range from about 10 Å to about 30 Å.
15. The method of claim 14 , wherein a metal layer is deposited on the tantalum barrier layer, and the metal layer comprises a metal selected from the group consisting of copper, tungsten, aluminum, tantalum, titanium, ruthenium alloys thereof, and combinations thereof.
16. A method for forming a device by depositing a tantalum-containing material on a substrate surface, comprising:
exposing a substrate within a process chamber sequentially to a pulse of a tantalum-containing gas comprising TAIMATA and to a pulse of a process gas comprising at least one secondary precursor;
depositing a tantalum-containing film on the substrate;
repeating the exposing step until the tantalum-containing film is deposited having a predetermined thickness; and
depositing a metal layer on the tantalum-containing film.
17. The method of claim 16 , wherein the tantalum-containing gas is heated to a predetermined temperature within a range from about 50° C. to about 80° C.
18. The method of claim 17 , wherein the substrate is heated to a temperature within a range from about 250° C. to about 40° C.
19. The method of claim 17 , wherein the at least one secondary precursor is selected from the group consisting of a nitrogen precursor, silicon precursor, a boron precursor, a phosphorous precursor, and combinations thereof.
20. The method of claim 19 , wherein a nitrogen precursor is selected from the group consisting of ammonia, atomic nitrogen, hydrazine, methylhydrazine, dimethylhydrazine, derivatives thereof, and combinations thereof.
21. The method of claim 19 , wherein a silicon precursor is selected from the group consisting of silane, disilane, methylsilane, hexamethyldisilane, tetrachlorosilane, hexachlorodisilane, derivatives thereof, and combinations thereof.
22. The method of claim 19 , wherein the predetermined thickness of the tantalum-containing film is within a range from about 10 Å to about 30 Å.
23. The method of claim 22 , wherein the tantalum-containing film comprises a material selected from the group consisting of tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, tantalum oxynitride, tantalum silicide, derivatives thereof, and combinations thereof.
24. The method of claim 23 , wherein the metal layer comprises a metal selected from the group consisting of copper, tungsten, aluminum, tantalum titanium, ruthenium, alloys thereof, and combinations thereof.
25. A method for depositing a tantalum-containing gate material on a substrate surface, comprising:
exposing a substrate to an ALD process cycle to form a tantalum-containing material thereon, wherein the ALD process cycle comprises a pulse of a tantalum-containing gas comprising TAIMATA, a pulse of a nitrogen precursor, and a pulse of a third precursor selected from the group consisting of a silicon precursor, a boron precursor, a phosphorous precursor, and combinations thereof; and
repeating the ALD process cycle until the tantalum-containing material is deposited on the substrate having a predetermined thickness.
26. The method of claim 25 , wherein a metal contact layer is deposited on the tantalum-containing material.
27. The method of claim 25 , wherein the predetermined thickness of the tantalum-containing material is within a range from about 40 Å to about 200 Å.
28. The method of claim 27 , wherein the tantalum-containing material comprises a material selected from the group consisting of tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, derivatives thereof, and combinations thereof.
29. The method of claim 28 , wherein the tantalum-containing material comprises tantalum silicon nitride, and a silicon precursor comprises a precursor selected from the group consisting of silane, disilane, and methylsilane.
30. The method of claim 28 , wherein the tantalum-containing material comprises tantalum boron nitride, and a boron precursor comprises diborane.
31. The method of claim 28 , wherein the tantalum-containing material comprises tantalum phosphorous nitride, and a phosphorous precursor comprises phosphine.