Method of spark-processing silicon and resulting materials
View Patent ↗The subject invention pertains to a method of spark processing silicon and resulting materials. The subject invention also relates to electroluminescent devices incorporating the materials produced by the subject method. The subject method for spark-processing can enhance the EL output, as compared with conventional spark-processed (sp) silicon. The enhancement of EL output can be due, at least in part, to increasing the light emitting area. The subject method can smooth the sp surface, so as to allow more complete coverage of the sp area with a continuous, semitransparent, conducting film. The smoothening of the sp surface can be accomplished by, for example, introducing into the spark plasma a volatile liquid, such as methanol, ethanol, acetone, in which particles can be suspended and/or in which a heavy ion salt is dissolved. The particles preferably float in the volatile liquid, rather than settle quickly. In a specific embodiment, silicon particles in the range of about 0.2 μm to about 20 μm in size can be suspended in the volatile liquid, such as methanol. The volatile liquid/silicon-particle suspension or volatile liquid/heavy ion salt solution, can then be inserted into a means for applying the mixture to the surface of a silicon wafer during spark-processing.
1. An electroluminescence device, comprising:
a silicon substrate having a first surface and a second surface;
an ohmic contact on the first surface of the silicon substrate;
spark-processed silicon on the second surface of the silicon substrate, wherein the spark-processed silicon on the second surface of the silicon substrate is produced by:
applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon, wherein applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon creates a spark plasma; and
introducing into the spark plasma a volatile liquid in which particles are suspended;
a semitransparent film of an electrically conducting material on the surface of the spark-processed silicon; and
a means for applying a voltage between the ohmic contact and the semitransparent film, wherein the semitransparent film is negatively biased with respect the ohmic contact, wherein light is emitted from the spark-processed silicon and passes through the semitransparent film upon application of a sufficient voltage between the ohmic contact and the semitransparent film.
2. The device according to claim 1 ,
wherein the semitransparent film comprises Ag.
3. The device according to claim 1 ,
wherein the semitransparent film comprises a material selected from the group consisting of: Al, Au, an organic, transparent, conducting material, and an inorganic, transparent, conducting material.
4. The device according to claim 1 ,
wherein introducing into the spark plasma a volatile liquid in which particles are suspended during the production of the spark-processed silicon enhances the electroluminescence of the spark-processed silicon.
5. The device according to claim 1 , wherein Si particles are suspended in the volatile liquid.
6. The device according to claim 5 ,
wherein Si particles having a size in the range of about 0.2 μm to about 20 μm are suspended in the volatile liquid.
7. The device according to claim 1 ,
wherein SiO 2 particles are suspended in the volatile liquid.
8. The device according to claim 7 ,
wherein SiO 2 particles having a size in the range of about 0.2 μm to about 20 μm are suspended in the volatile liquid.
9. The device according to claim 1 ,
wherein Si 3 N 4 particles are suspended in the volatile liquid.
10. The device according to claim 9 , wherein Si 3 N 4 particles having a size in the range of about 0.2 μm to about 20 μm are suspended in the volatile liquid.
11. The device according to claim 1 ,
wherein the volatile liquid comprises methanol.
12. The device according to claim 1 ,
wherein the volatile liquid comprises ethanol.
13. The device according to claim 1 ,
wherein the volatile liquid comprises acetone.
14. The device according to claim 1 ,
wherein introducing into the spark plasma a volatile liquid in which particles are suspended creates an aerosol of the volatile liquid in which particles are suspended.
15. The device according to claim 1 ,
wherein applying to the silicon sparks comprises applying a voltage between an electrode and the silicon.
16. The device according to claim 15 ,
wherein introducing into the spark plasma a volatile liquid in which particles are suspended comprises introducing into the spark plasma a volatile liquid in which particles are suspended via a means for introducing into the spark plasma a volatile liquid in which particles are suspended which is in electrical contact with the electrode.
17. The device according to claim 15 ,
wherein introducing into the spark plasma a volatile liquid in which particles are suspended comprises introducing into the spark plasma a volatile liquid in which particles are suspended via a means for introducing into the spark plasma a volatile liquid in which particles are suspended which is electrically isolated from the electrode.
18. The device according to claim 15 ,
wherein a tip of the electrode is separated from the silicon by a distance between about 0.5 mm and about 10 mm.
19. The device according to claim 15 ,
wherein a tip of the electrode is separated from the silicon by a distance between about 3 mm and about 4 mm.
20. The device according to claim 16 ,
wherein the means for introducing into the spark plasma a volatile liquid in which particles are suspended comprises a metal needle, wherein the metal needle acts as the electrode.
21. The device according to claim 20 ,
wherein the tip of the needle is modified such that an aerosol of the volatile liquid in which particles are suspended is introduced into the spark plasma.
22. An electroluminescence device, comprising:
a silicon substrate having a first surface and a second surface;
an ohmic contact on the first surface of the silicon substrate;
spark-processed silicon on the second surface of the silicon substrate, wherein the spark-processed silicon on the second surface of the silicon substrate is produced by:
applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon, wherein applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon creates a spark plasma; and
introducing into the spark plasma a volatile liquid in which a salt of a heavy ion is dissolved;
a semitransparent film of an electrically conducting material on the surface of the spark-processed silicon; and
a means for applying a voltage between the ohmic contact and the semitransparent film, wherein the semitransparent film is negatively biased with respect to the ohmic contact, wherein light is emitted from the spark-processed silicon and passes through the semitransparent film upon application of a sufficient voltage between the ohmic contact and the semitransparent film.
23. The device according to claim 4 ,
wherein the semitransparent film comprises Ag.
24. The device according to claim 4 ,
wherein the semitransparent film comprises a material selected from the group consisting of: Al, Au, an organic, transparent, conducting material, and an inorganic, transparent, conducting material.
25. The device according to claim 22 ,
wherein the salt of a heavy ion is a transition metal salt.
26. The device according to claim 25 ,
wherein the transition metal salt is manganese chloride.
27. The device according to claim 22 ,
wherein the salt of a heavy ion is rare earth ion salt.
28. The device according to claim 22 ,
wherein the salt of a heavy ion is a lanthanide ion salt.
29. The device according to claim 28 ,
wherein the lanthanide ion salt is selected from the group consisting of: cerium chloride, terbium chloride, and europium chloride.
30. The device according to claim 22 ,
wherein introducing into the spark plasma a volatile liquid in which a salt of a heavy ion is dissolved during the production of the spark-processed silicon creates an aerosol of the volatile liquid in which a salt of a heavy ion is dissolved.