Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices
One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.
1. A method of depositing a low dielectric constant film, comprising:
chemical vapor depositing a low dielectric constant film comprising metastable groups using a silicon-containing precursor comprising a methyl group bonded to silicon and an alkoxy group bonded to silicon and one or more hydrocarbon precursors selected from the group consisting of norbornadiene and butadiene; and
treating the low dielectric constant film to eject the metastable groups.
2. The method of claim 1 , wherein the silicon-containing precursor comprises two alkoxy groups bonded to silicon.
3. The method of claim 2 , wherein the alkoxy groups are ethoxy groups.
4. The method of claim 2 , wherein the alkoxy groups are methoxy groups.
5. The method of claim 2 , wherein the silicon-containing precursor is diethoxymethylsilane.
6. The method of claim 2 , wherein the silicon-containing precursor is dimethoxydimethylsilane.
7. The method of claim 1 , wherein treating the low dielectric constant film comprises electron beam treating the low dielectric constant film.
8. The method of claim 7 , wherein treating the low dielectric constant film further comprises thermally annealing the low dielectric constant film.
9. The method of claim 8 , wherein treating the low dielectric constant film further comprises plasma treating the low dielectric constant film.
10. The method of claim 7 , wherein treating the low dielectric constant film further comprises plasma treating the low dielectric constant film.
11. A method of depositing a low dielectric constant film, comprising:
chemical vapor depositing a low dielectric constant film comprising metastable groups using a silicon-containing precursor comprising a methyl group bonded to silicon, two alkoxy groups bonded to silicon, and H bonded to silicon and one or more hydrocarbon precursors selected from the group consisting of norbornadiene and butadiene; and
treating the low dielectric constant film to eject the metastable groups.
12. The method of claim 11 , wherein the alkoxy groups are ethoxy groups.
13. The method of claim 11 , wherein the alkoxy groups are methoxy groups.
14. The method of claim 11 , wherein the alkoxy groups are singly bonded to silicon.
15. The method of claim 11 , wherein the silicon-containing precursor is diethoxymethylsilane and the one or more hydrocarbon precursors is norbornadiene.
16. The method of claim 11 , wherein treating the low dielectric constant film comprises electron beam treating the low dielectric constant film.
17. A method of depositing a low dielectric constant film, comprising:
chemical vapor depositing a low dielectric constant film comprising metastable groups using diethoxymethylsilane and norbornadiene as precursors; and
electron beam treating the low dielectric constant film to eject the metastable groups.
18. The method of claim 17 , further comprising annealing the low dielectric constant film.
19. The method of claim 17 , further comprising plasma treating the low dielectric constant film.