Process for determination of optimized exposure conditions for transverse distortion mapping
A process for providing illumination source conditions for the accurate determination Zernike tilt coefficients in the presence of coma is described. Large feature-shift coma sensitivity is simulated for a range of illumination conditions. The resulting source sensitivity data is modeled and a practical array of source shapes, each of which is optimized to eliminate the effects of transverse distortion due to third-order coma, is identified. The optimized set of source shapes can be used to more accurately determine Zernike terms a2 and a3 using a variety of methods. Knowledge of the lens distortion data in the absence of coma induced shifts can be entered into more traditional overlay regression routines to better identify systematic and random error. Additional applications of the above outlined procedure include: improved lithographic simulation using conventional optical modeling software and advanced process control in the form of feedback loops that automatically adjust the projection lens for optimum system performance.
1. A process for providing illumination conditions for accurate determination of Zernike tilt coefficients in the presence of third-order coma for a lithographic projection system, the process comprising:
selecting an optimized illumination condition;
performing a lens distortion test method using an optimized illumination condition selected from the determined illumination conditions;
constructing a lens distortion map in accordance with the collected illumination conditions and calculating Zernike tilt terms a2 and a3 in accordance with the lens distortion map such that the calculated Zernike tilt terms correspond to calculations in the absence of the effects of third-order coma for field positions of interest.
2. A process as defined in claim 1 , wherein selecting an optimized illumination condition comprises:
simulating a feature-shift in a scanning system of the lithographic projection imaging system in accordance with input parameters of interest and a range of illumination conditions;
determining illumination conditions within the range that significantly reduce large feature shifts that are due to third-order coma; and
collecting the determined illumination conditions to enable the accurate determination of Zernike tilt coefficients.
3. A process as defined in claim 2 , wherein the input parameters include an identifier for source geometry, an exit pupil geometry, a large feature of interest, an indicator of lithography processing conditions, and lens aberration for third-order x-coma and y-coma.
4. A process as described in claim 3 , wherein the lithography processing conditions include conditions comprising one or more of wavelength, resist index of refraction, thickness, diffusion, focus settings, exposure settings, and NA of the exit pupil.
5. A process as defined in claim 2 , wherein the determined illumination conditions include source sigma settings and geometry.
6. A process as defined in claim 2 , wherein the determined illumination conditions include source NA settings and geometry.
7. A process as defined in claim 2 , wherein the determined illumination conditions include source intensity distribution data and geometry.
8. A process as defined in claim 1 , wherein selecting an optimized illumination condition comprises simulating a feature-shift as a function of illumination conditions for features of interest.
9. A process as defined in claim 1 , wherein selecting an optimized illumination condition comprises retrieving data from a data look-up table.
10. A process as described in claim 9 , wherein the look-up table includes indexing parameters comprising illumination conditions that eliminate feature shift due to third-order coma.
11. A process as described in claim 9 , wherein the look-up table includes indexing parameters comprising coma induced feature-shift or coma sensitivity as a function of illumination conditions.
12. A process as described in claim 9 , wherein the look-up table includes indexing parameters comprising a data relationship of optimized illumination conditions according to the numerical aperture and wavelength of the imaging system.
13. A process as described in claim 9 , wherein the look-up table includes records populated through simulation using known aberration data.
14. A process as defined in claim 9 , wherein the determined illumination conditions include source sigma settings and geometry.
15. A process as defined in claim 9 , wherein the determined illumination conditions include source NA settings and geometry.
16. A process as defined in claim 9 , wherein the determined illumination conditions include source intensity distribution data and geometry.
17. A process for operating a lithographic projection imaging system, the process comprising:
simulating a feature-shift in a scanning system of the lithographic projection imaging system in accordance with input parameters of interest and a range of illumination conditions;
determining illumination conditions within the range that significantly reduce large feature shifts that are due to third-order coma;
collecting the determined illumination conditions to enable the accurate determination of Zernike tilt coefficients;
performing a lens distortion test method using an optimized illumination condition selected from the determined illumination conditions;
constructing a lens distortion map in accordance with the collected illumination conditions and calculating Zernike tilt terms a2 and a3 in accordance with the lens distortion map such that the calculated Zernike tilt terms correspond to calculations in the absence of the effects of third-order coma for field positions of interest.
18. A process as defined in claim 17 , wherein the input parameters include an identifier for source geometry, an exit pupil geometry, a large feature of interest, an indicator of lithography processing conditions, and lens aberration for third-order x-coma and y-coma.
19. A process as defined in claim 17 , wherein the determined illumination conditions include source sigma settings and geometry.
20. A process as defined in claim 17 , wherein the determined illumination conditions include source NA settings and geometry.
21. A process as defined in claim 17 , wherein the determined illumination conditions include source intensity distribution data and geometry.
22. A projection lithography tool comprising:
an illumination source;
a scanning system; and
a scanning system controller;
wherein a projection lens of the scanning system is adjusted by the scanning system controller in accordance with Zernike tilt coefficients determined by the controller after performing operations comprising:
selecting an optimized illumination condition;
performing a lens distortion test method using an optimized illumination condition selected from the determined illumination conditions;
constructing a lens distortion map in accordance with the collected illumination conditions and calculating Zernike tilt terms a2 and a3 in accordance with the lens distortion map such that the calculated Zernike tilt terms correspond to calculations in the absence of the effects of third-order coma for field positions of interest.
23. A projection lithography tool as defined in claim 22 , wherein the controller selects an optimized illumination condition by performing operations comprising:
simulating a feature-shift in a scanning system of the lithographic projection imaging system in accordance with input parameters of interest and a range of illumination conditions;
determining illumination conditions within the range that significantly reduce large feature shifts that are due to third-order coma; and
collecting the determined illumination conditions to enable the accurate determination of Zernike tilt coefficients.
24. A projection lithography tool as defined in claim 23 , wherein the input parameters include an identifier for source geometry, an exit pupil geometry, a large feature of interest, an indicator of lithography processing conditions, and lens aberration for third-order x-coma and y-coma.
25. A projection lithography tool as described in claim 24 , wherein the lithography processing conditions include conditions comprising one or more of wavelength, resist index of refraction, thickness, diffusion, focus settings, exposure settings, and NA of the exit pupil.
26. A projection lithography tool as defined in claim 23 , wherein the determined illumination conditions include source sigma settings and geometry.
27. A projection lithography tool as defined in claim 23 , wherein the determined illumination conditions include source NA settings and geometry.
28. A projection lithography tool as defined in claim 23 , wherein the determined illumination conditions include source intensity distribution data and geometry.
29. A projection lithography tool as defined in claim 22 , wherein selecting an optimized illumination condition comprises simulating a feature-shift as a function of illumination conditions for features of interest.
30. A projection lithography tool as defined in claim 22 , wherein selecting an optimized illumination condition comprises retrieving data from a data look-up table.
31. A projection lithography tool as described in claim 30 , wherein the look-up table includes indexing parameters comprising illumination conditions that eliminate feature shift due to third-order coma.
32. A projection lithography tool as described in claim 30 , wherein the look-up table includes indexing parameters comprising coma induced feature-shift or coma sensitivity as a function of illumination conditions.
33. A projection lithography tool as described in claim 30 , wherein the look-up table includes indexing parameters comprising a data relationship of optimized illumination conditions according to the numerical aperture and wavelength of the imaging system.
34. A projection lithography tool as described in claim 30 , wherein the look-up table includes records populated through simulation using known aberration data.
35. A projection lithography tool as described in claim 30 , wherein the determined illumination conditions include source sigma settings and geometry.
36. A projection lithography tool as described in claim 30 , wherein the determined illumination conditions include source NA settings and geometry.
37. A projection lithography tool as described in claim 30 , wherein the determined illumination conditions include source intensity distribution data and geometry.
38. A process for chip fabrication with a photolithographic projection imaging system, the process comprising:
determining illumination conditions of the projection imaging system for accurate determination of Zernike tilt coefficients in the presence of third-order coma for a lithographic projection system by performing operations comprising
selecting an optimized illumination condition,
performing a lens distortion test method using an optimized illumination condition selected from the determined illumination conditions, and
constructing a lens distortion map in accordance with the collected illumination conditions and calculating Zernike tilt terms a2 and a3 in accordance with the lens distortion map such that the calculated Zernike tilt terms correspond to calculations in the absence of the effects of third-order coma for field positions of interest;
controlling lithographic imaging in the system in accordance with the determined Zernike tilt coefficients; and
operating a chip producing process in accordance with the controlled lithographic imaging.
39. A process as defined in claim 38 , wherein selecting an optimized illumination condition comprises:
simulating a feature-shift in a scanning system of the lithographic projection imaging system in accordance with input parameters of interest and a range of illumination conditions;
determining illumination conditions within the range that significantly reduce large feature shifts that are due to third-order coma; and
collecting the determined illumination conditions to enable the accurate determination of Zernike tilt coefficients.
40. A process as defined in claim 39 , wherein the input parameters include an identifier for source geometry, an exit pupil geometry, a large feature of interest, an indicator of lithography processing conditions, and lens aberration for third-order x-coma and y-coma.
41. A process as described in claim 40 , wherein the lithography processing conditions include conditions comprising one or more of wavelength, resist index of refraction, thickness, diffusion, focus settings, exposure settings, and NA of the exit pupil.
42. A process as defined in claim 39 , wherein the determined illumination conditions include source sigma settings and geometry.
43. A process as defined in claim 39 , wherein the determined illumination conditions include source NA settings and geometry.
44. A process as defined in claim 39 , wherein the determined illumination conditions include source intensity distribution data and geometry.
45. A process as defined in claim 38 , wherein selecting an optimized illumination condition comprises simulating a feature-shift as a function of illumination conditions for features of interest.
46. A process as defined in claim 38 , wherein selecting an optimized illumination condition comprises retrieving data from a data look-up table.
47. A process as defined in claim 46 , wherein the look-up table includes indexing parameters comprising illumination conditions that eliminate feature shift due to third-order coma.
48. A process as described in claim 46 , wherein the look-up table includes indexing parameters comprising coma induced feature-shift or coma sensitivity as a function of illumination conditions.
49. A process as described in claim 46 , wherein the look-up table includes indexing parameters comprising a data relationship of optimized illumination conditions according to the numerical aperture and wavelength of the imaging system.
50. A process as described in claim 46 , wherein the look-up table includes records populated through simulation using known aberration data.
51. A process as defined in claim 46 , wherein the determined illumination conditions include source sigma settings and geometry.
52. A process as defined in claim 46 , wherein the determined illumination conditions include source NA settings and geometry.
53. A process as defined in claim 46 , wherein the determined illumination conditions include source intensity distribution data and geometry.