Semiconductor device with single crystal semiconductor layer(s) bonded to insulating surface of substrate
A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further includes a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer, and a second insulating layer, which has been deposited on the entire insulating surface of the substrate except an area in which the first insulating layer is present.
1. A semiconductor device comprising a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate,
wherein the device further includes:
a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer,
a second insulating layer provided on the entire insulating surface of the substrate except an area in which the first insulating layer is present; and
wherein at least part of an upper surface of the second insulating layer is coplanar with an upper surface of the first insulating layer and/or is located at an elevation no higher than an elevation of a bottom surface of the single crystal semiconductor layer.
2. The semiconductor device of claim 1 , wherein every edge of the second insulating layer is aligned with its associated edge of the first insulating layer.
3. The semiconductor device of claim 1 , further comprising a non-single crystal semiconductor layer on the second insulating layer.
4. A semiconductor device comprising:
a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate,
wherein the device further includes:
a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer,
a second insulating layerprovided on the entire insulating surface of the substrate except an area in which the first insulating layer is present; and
wherein the thickness of the first insulating layer is substantially equal to that of the second insulating layer.
5. An electronic device including semiconductor devices, the electronic device comprising:
a substrate with an insulating surface;
a single crystal semiconductor layer, which is bonded onto a selected area of the insulating surface of the substrate;
a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer;
a second insulating layer provided on the entire insulating surface except the selected area where the first insulating layer is present;
a single crystal semiconductor device, which has been fabricated over the first insulating layer so as to include at least a portion of the single crystal semiconductor layer; and
a non-single crystal semiconductor device, which has been fabricated on the second insulating layer, and wherein the single crystal semiconductor device is a thin film transistor, and the non-single crystal semiconductor device is another thin film transistor.
6. The electronic device of claim 5 , wherein every edge of the second insulating layer is aligned with its associated edge of the first insulating layer.
7. The electronic device of claim 5 , wherein the non-single crystal semiconductor device includes at least a portion of a non-single crystal semiconductor layer provided on the second insulating layer.
8. An electronic device including semiconductor devices, the electronic device comprising:
a substrate with an insulating surface;
a single crystal semiconductor layer, which is bonded onto a selected area of the insulating surface of the substrate;
a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer;
a second insulating layer provided on the entire insulating surface except the selected area where the first insulating layer is present;
a single crystal semiconductor device, which has been fabricated over the first insulating layer so as to include at least a portion of the single crystal semiconductor layer;
a non-single crystal semiconductor device, which has been fabricated on the second insulating layer; and
wherein the thickness of the first insulating layer is substantially equal to that of the second insulating layer.
9. An electronic device including semiconductor devices, the electronic device comprising:
a substrate with an insulating surface;
a single crystal semiconductor layer, which is bonded onto a selected area of the insulating surface of the substrate;
a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer;
a second insulating layer provided on the entire insulating surface except the selected area where the first insulating layer is present;
a single crystal semiconductor device, which has been fabricated over the first insulating layer so as to include at least a portion of the single crystal semiconductor layer;
a non-single crystal semiconductor device, which has been fabricated on the second insulating layer;
wherein the non-single crystal semiconductor device includes at least a portion of a non-single crystal semiconductor layer provided on the second insulating layer; and
wherein the single crystal semiconductor device is a thin-film transistor, which includes at least the portion of the single crystal semiconductor layer as a channel region, and
wherein the non-single crystal semiconductor device is a thin-film transistor, which includes at least the portion of the non-single crystal semiconductor layer as a channel region.
10. An electronic device including semiconductor devices, the electronic device comprising:
a substrate with an insulating surface;
a single crystal semiconductor layer, which is bonded onto a selected area of the insulating surface of the substrate;
a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer;
a second insulating layer, which has been deposited on the entire insulating surface except the selected area where the first insulating layer is present;
a single crystal semiconductor device, which has been fabricated over the first insulating layer so as to include at least a portion of the single crystal semiconductor layer;
a non-single crystal semiconductor device, which has been fabricated on the second insulating layer;
wherein the non-single crystal semiconductor device includes at least a portion of a non-single crystal semiconductor layer provided on the second insulating layer;
wherein the single crystal semiconductor device is a thin-film transistor, which includes at least the portion of the single crystal semiconductor layer as a channel region,
wherein the non-single crystal semiconductor device is a thin-film transistor, which includes at least the portion of the non-single crystal semiconductor layer as a channel region;
a third insulating layer, which is located between the second insulating layer and the non-single crystal semiconductor layer and between the single crystal semiconductor layer and the non-single crystal semiconductor layer,
wherein the single crystal semiconductor device further includes a gate electrode on the third insulating layer, and
wherein the non-single crystal semiconductor device further includes a gate insulating film, which covers the non-single crystal semiconductor layer, and a gate electrode on the gate insulating film, and
wherein the third insulating layer is thinner than the gate insulating film of the non-single crystal semiconductor device.
11. An electronic device including semiconductor devices, the electronic device comprising:
a substrate with an insulating surface;
a single crystal semiconductor layer, which is bonded onto a selected area of the insulating surface of the substrate;
a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer;
a second insulating layer, which has been deposited on the entire insulating surface except the selected area where the first insulating layer is present;
a single crystal semiconductor device, which has been fabricated over the first insulating layer so as to include at least a portion of the single crystal semiconductor layer;
a non-single crystal semiconductor device, which has been fabricated on the second insulating layer;
wherein the non-single crystal semiconductor device includes at least a portion of a non-single crystal semiconductor layer provided on the second insulating layer;
wherein the single crystal semiconductor device is a thin-film transistor, which includes at least the portion of the single crystal semiconductor layer as a channel region,
wherein the non-single crystal semiconductor device is a thin-film transistor, which includes at least the portion of the non-single crystal semiconductor layer as a channel region; and
wherein a gate electrode of the single crystal semiconductor device and a channel region of the non-single crystal semiconductor device are made of the same polycrystalline semiconductor film.
12. A semiconductor device comprising
a substrate having an SiO 2 film on the surface; and
a single crystal silicon layer, which is bonded to a surface of the SiO 2 film,
wherein the device further includes:
a first SiO 2 layer, which is provided between the surface of the SiO 2 film and the single crystal silicon layer,
a second SiO 2 layer, which has been provided on the entire surface of the SiO 2 film except an area in which the first SiO 2 layer is present; and
wherein at least part of an upper surface of the second SiO 2 layer is coplanar with an upper surface of the first SiO 2 layer and/or is located at an elevation no higher than an elevation of a bottom surface of the single crystal silicon layer.
13. A semiconductor device comprising:
a substrate having an SiO 2 film on a surface thereof;
a single crystal silicon layer which is bonded to a surface of the SiO 2 film;
a first SiO 2 layer which is provided between the surface of the SiO 2 film and the single crystal silicon layer,
a second SiO 2 layer provided on the entire surface of the SiO 2 film except an area in which the first SiO 2 layer is present; and
wherein a thickness of the first SiO 2 layer is substantially equal to a thickness of the second SiO 2 layer.