Wafer level capped sensor
A sensor has a die (with a working portion), a cap coupled with the die to at least partially cover the working portion, and a conductive pathway extending through the cap to the working portion. The pathway provides an electrical interface to the working portion.
1. A sensor comprising:
a die having a working portion;
a cap coupled with the die to at least partially cover the working portion;
a sensing component within the working portion;
amplification circuitry operatively coupled with the sensing component; and
a conductive pathway extending through the cap to the working portion, the pathway providing an electrical interface to the working portion,
the amplification circuitry being electrically positioned between the sensing component and the conductive pathway.
2. The sensor as defined by claim 1 wherein the sensing component includes MEMS structure, the conductive pathway capable of transmitting electrical signals relating to the operation of the MEMS structure.
3. The sensor as defined by claim 1 wherein the sensing component includes detection circuitry for producing a signal representing a quality sensed by the sensing component, the amplifying circuitry amplifying the signal while substantially maintaining its form.
4. The sensor as defined by claim 1 wherein the cap and die form a chamber for sealingly containing the working portion of the die.
5. The sensor as defined by claim 1 wherein the cap has a top surface, the conductive pathway extending through the cap to the top surface, the conductive pathway being exposed on the top surface.
6. The sensor as defined by claim 1 wherein the sensing component includes accelerometer structure.
7. The sensor as defined by claim 1 wherein the sensing component includes gyroscope structure.
8. The sensor as defined by claim 1 further including an electrical interconnect substrate supporting the amplification circuitry, the die and cap together forming a capped die, the capped die being coupled to the substrate so that the conductive path contacts the substrate to interconnect with the amplification circuitry.
9. The sensor as defined by claim 1 wherein the cap hermetically seals the working portion of the die.
10. The sensor as defined by claim 1 wherein the working portion includes both the sensing component and circuitry for at least in part detecting movement of the sensing component.
11. A sensor comprising:
a die having a working portion with movable structure and circuitry for detecting movement of the movable structure, the working portion also having amplification circuitry; and
a cap having a conductive pathway therethrough, the amplification circuitry being electrically positioned between the conductive pathway and the movable structure.
12. The sensor as defined by claim 11 wherein the movable structure includes a movable mass suspended above a substrate.
13. The sensor as defined by claim 11 wherein the cap has a top surface, the conductive pathway extending through the cap to the top surface, the conductive pathway being exposed on the top surface.