Semiconductor laser
In a refractive index coupling distributed semiconductor laser having a Λ/2-phase-shift distributed feedback structure with a diffraction grating having a refractive index coupling property on an active layer, when viewed in a light distributed feedback direction, a value of (duty of a high refractive index portion)/(duty of a low refractive index portion) of a diffraction grating in a rear end face region is larger than that of a diffraction grating in a front end face region. In this manner, a coupling coefficient κ2 in a front end face region of a conventional semiconductor laser is smaller than a coupling coefficient κ1 in a rear end face region and is larger than 100 cm −1 .
1. A distributed feedback semiconductor laser comprising:
opposed first and second end surfaces through which light generated within the semiconductor laser is emitted;
a central phase-shift structure located substantially centrally between the first and second end surfaces; and
first and second complex coupled diffraction gratings respectively extending from the central phase-shift structure to the first and second end faces, wherein
an average coupling coefficient κ2 of the second complex coupled diffraction grating is smaller than an average coupling coefficient κ1 of the first complex coupled diffraction grating, and the coupling coefficient κ1 is within a range from 175 cm −1 to 295 cm −1 , and
absolute value of a real part of a coupling coefficient is at least four times absolute value of an imaginary part of the coupling coefficient.
2. The distributed feedback semiconductor laser according to claim 1 , including a plurality of phase-shift structures located at substantially symmetrical positions with respect to the central phase-shift structure and in the first and second complex coupled diffraction gratings.
3. The distributed feedback semiconductor laser according to claim 1 , wherein each of the first and second complex coupled diffraction gratings includes alternating regions of higher and lower refractive index materials and the ratio of higher to lower refractive index materials is larger in a region having the coupling coefficient κ1 than in a region having the coupling coefficient κ2.
4. The distributed feedback semiconductor laser according to claim 1 , wherein a layer supporting the first and second complex coupled diffraction gratings has a thickness smaller in a region having the coupling coefficient κ1 than in a region having the coupling coefficient κ2.
5. The distributed feedback semiconductor laser according to claim 1 , wherein equivalent refractive index in a region having the coupling coefficient κ2 is n2, equivalent refractive index in a region having the coupling coefficient κ1 is n1, the period of the second complex coupled diffraction grating in the region having the coupling coefficient κ2 is Λ2, the period of the first complex coupled diffraction grating in the region having the coupling coefficient κ1 is Λ1, and n2·Λ2 is substantially equal to n1·Λ1.
6. The distributed feedback semiconductor laser according to claim 1 , wherein the first and second complex coupled diffraction gratings have respective, different periods.
7. The distributed feedback semiconductor laser according to claim 1 , wherein the coupling coefficient κ2 exceeds 100 cm −1 .
8. A distributed feedback semiconductor laser comprising:
opposed first and second end surfaces through which light generated within the semiconductor laser may be emitted;
a central phase-shift structure located substantially centrally between the first and second end surfaces; and
first and second diffraction gratings respectively extending from the central phase-shift structure to the first and second end faces and having respective, different periods, wherein an average coupling coefficient κ1 of the second diffraction grating is smaller than an average coupling coefficient κ1 of the first diffraction grating, and the coupling coefficient κ2 exceeds 100 cm −1 , wherein
each of the first and second diffraction gratings includes alternating regions of higher and lower refractive index materials,
the regions having a higher refractive index have a layered structure, and
the number of layers of the higher refractive index regions in the first diffraction grating and having the coupling coefficient κ1 is larger than the number of layers of the higher refractive index materials in the second diffraction grating having the coupling coefficient κ2.