Surface acoustic wave filter and communication apparatus
A surface acoustic wave (SAW) filter includes a piezoelectric substrate. A resin pattern having a permittivity less than that of the piezoelectric substrate and first and second conductor patterns are disposed on the piezoelectric substrate. The first conductor pattern defines two one-terminal-pair SAW resonators and two longitudinally coupled resonator SAW filters. A portion of the second conductor pattern defines wiring traces having different potentials. Portions of the wiring traces facing each other in a plan view are disposed on the resin pattern.
1. A surface acoustic wave filter comprising:
a piezoelectric substrate;
an insulating pattern disposed on the piezoelectric substrate and having permittivity less than that of the piezoelectric substrate; and
a conductor pattern disposed on at least one of the piezoelectric substrate and the insulating pattern; wherein
a portion of the conductor pattern defines IDTs and another portion of the conductor pattern defines wiring traces; and
at a portion where wiring traces having different potentials face each other in a plan view, a ground wiring trace is disposed directly on the piezoelectric substrate; and
at least one of the wiring traces having a different potential from that of the ground wiring trace is disposed on the insulating pattern.
2. A surface acoustic wave filter according to claim 1 , wherein the conductor pattern includes a first conductor pattern disposed on the piezoelectric substrate, a portion thereof defining the IDTs, and a second conductor pattern which is in conduction with the first conductor pattern, a portion thereof being disposed on the insulating pattern.
3. A surface acoustic wave filter according to claim 1 , wherein the relative permittivity of the insulating pattern is less than about 4.
4. A surface acoustic wave filter according to claim 1 , wherein the relative permittivity of the piezoelectric substrate is about 20 or more.
5. A surface acoustic wave filter according to claim 4 , wherein the piezoelectric substrate includes at least one of LiTaO 3 , LiNbO 3 , and Li 2 B 4 O 7 .
6. A surface acoustic wave filter according to claim 1 , wherein the center frequency of a pass band is about 500 MHz or more.
7. A surface acoustic wave filter according to claim 1 , wherein the center frequency of a pass band is about 1 GHz or more.
8. A surface acoustic wave filter according to claim 1 , wherein the surface acoustic wave filter has a balance-to-unbalance transformer function and includes a balanced signal terminal and an unbalanced signal terminal.
9. A surface acoustic wave filter according to claim 8 , wherein at least one of a wiring trace connected to the balanced signal terminal and a wiring trace connected to the unbalanced signal terminal is disposed on the insulating pattern.
10. A communication apparatus comprising the surface acoustic wave filter according to claim 1 .
11. A surface acoustic wave filter comprising:
a piezoelectric substrate;
an insulating pattern disposed on the piezoelectric substrate and having permittivity less than that of the piezoelectric substrate; and
a conductor pattern disposed on at least one of the piezoelectric substrate and the insulating pattern; wherein
a portion of the conductor pattern defines IDTs and another portion of the conductor pattern defines wiring traces; and
at a portion where wiring traces having different potentials face each other in a plan view, at least a portion of at least one of the wiring traces is disposed on the insulating pattern; and
the insulating pattern includes resin.
12. A surface acoustic wave filter comprising:
a piezoelectric substrate;
an insulating pattern disposed on the piezoelectric substrate and having permittivity less than that of the piezoelectric substrate; and
a conductor pattern disposed on at least one of the piezoelectric substrate and the insulating pattern; wherein
a portion of the conductor pattern defines IDTs and another portion of the conductor pattern defines wiring traces; and
at a portion where wiring traces having different potentials face each other in a plan view, at least a portion of at least one of the wiring traces is disposed on the insulating pattern; and
the insulating pattern has a thickness of about 0.5 μm or more.