Diamond films and methods of making diamond films
The present invention provides films and substrates coated with films that comprise a nano-crystalline diamond matrix that is substantially free of graphite inclusions. The present invention also provides a method of chemical vapor deposition to prepare the films. The method of chemical vapor deposition operates at a DC bias voltage that substantially precludes the formation of a plasma ion capable of causing a region of a nano-crystalline diamond matrix within a forming film to allotrope when the plasma ion collides with the film.
1. A film comprising a nano-crystalline diamond matrix, wherein the nano-crystalline diamond matrix is substantially free of graphite inclusions and wherein the film has an average root mean square surface roughness of less than 5.00 nm.
2. The film of claim 1 , wherein the infrared absorption peaks between 3200 cm −1 and 2800 cm −1 of the nano-crystalline diamond matrix are at 2930 cm −1 and 2880 cm −1 only.
3. The film of claim 1 , wherein the nano-crystalline diamond matrix has no infrared absorption peaks at 2980 cm −1 and 3100 − .
4. The film of claim 1 , wherein the nano-crystalline diamond matrix has a hardness of at least 60 GPa.
5. The film of claim 1 , wherein the film is between 40 nm and 1000 nm thick.
6. The film of claim 1 , wherein the film is thermally stable at 450° C. or higher.
7. The film of claim 1 , wherein the film has less than 3 weight percent of graphite.
8. The film of claim 1 , wherein the film has an average root mean square surface roughness of less than 2.00 nm.
9. The film of claim 8 , wherein the film has an average root mean square surface roughness of less than 1.50 nm.
10. A film comprising a nano-crystalline diamond matrix, wherein the film has an average root mean square surface roughness of less than 5.00 nm.
11. The film of claim 10 , wherein the film has an average root mean square surface roughness of less than 2.00 nm.
12. The film of claim 10 , wherein the film has an average root mean square surface roughness of less than 1.50 nm.
13. The film of claim 10 , wherein the infrared absorption peaks between 3200 cm −1 and 2800 cm −1 of the nano-crystalline diamond matrix are at 2930 cm −1 and 2880 cm −1 only.
14. The film of claim 10 , wherein the nano-crystalline diamond matrix has no infrared absorption peaks at 2980 cm −1 and 3100.
15. The film of claim 10 , wherein the nano-crystalline diamond matrix has a hardness of at least 60 GPa.
16. The film of claim 10 , wherein the film is between 40 nm and 1000 nm thick.
17. The film of claim 10 , wherein the film is thermally stable at 450° C. or higher.
18. The film of claim 10 , wherein the film has less than 1 weight percent of graphite.
19. The film of claim 10 , wherein the film has intrinsic stress.
20. The film of claim 10 , wherein the intrinsic stress is tensile stress.
21. The film of claim 10 , wherein the intrinsic stress is compressive stress.
22. The film of claim 10 , wherein the film is free of mechanical stress.
23. A film comprising a nano-crystalline diamond matrix, wherein the nano-crystalline diamond matrix has less than 1 weight percent of graphite.
24. The film of claim 23 , wherein the infrared absorption peaks between 3200 cm −1 and 2800 cm −1 of the nano-crystalline diamond matrix are at 2930 cm −1 and 2880 cm −1 only.
25. The film of claim 23 , wherein the nano-crystalline diamond matrix has no infrared absorption peaks at 2980 cm −1 and 3100 −1 .
26. The film of claim 23 , wherein the nano-crystalline diamond matrix has a hardness of at least 60 GPa.
27. The film of claim 23 , wherein the film is between 40 nm and 1000 nm thick.
28. The film of claim 23 , wherein the film is thermally stable at 450° C. or higher.
29. The film of claim 23 , wherein the film has intrinsic stress.
30. The film of claim 23 , wherein the intrinsic stress is tensile stress.
31. The film of claim 23 , wherein the intrinsic stress is compressive stress.
32. The film of claim 23 , wherein the film is free of mechanical stress.