IP Library › Granted Patent US 7,315,047
Granted Patent B2
US 7,315,047 · App. 11/041,890 · Granted Jan 1, 2008

Light-emitting device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,315,047
App. No.
11/041,890
Granted
Jan 1, 2008
Kind
B2
Abstract

A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from a light-emitting element into a thin film transistor as well as reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. The disclosed light-emitting device comprises a substrate; a first insulating layer provided over the substrate; a transistor provided over the first insulating layer; and a second insulating layer having a first opening portion so that the transistor is covered and the substrate is exposed; wherein a light-emitting element is provided inside the first opening portion.

Claims (144)

1. A light-emitting device comprising:

a substrate;

a first insulating layer provided over the substrate;

a transistor provided over the first insulating layer; and

a second insulating layer having a first opening portion to expose a portion of the substrate;

a third insulating layer covering the first opening portion and in contact with the second insulating layer;

a first electrode provided over the third insulating layer; and

a bank layer having a second opening portion so that a portion of the first electrode is exposed, wherein the bank layer comprises a resin material,

wherein the first electrode, a light-emitting layer, and a second electrode are sequentially stacked over the substrate inside the first opening portion, and

wherein the transistor is covered with the second insulating layer.

2. A light-emitting device comprising:

a substrate;

a first insulating layer provided over the substrate;

a transistor provided over the first insulating layer;

a second insulating layer having a first opening portion to expose a portion of the substrate; and

a third insulating layer covering the first opening portion and in contact with the second insulating layer;

a first electrode provided over the third insulating layer; and

a bank layer having a second opening portion so that a portion of the first electrode is exposed,

wherein the first electrode, a light-emitting layer, and a second electrode are sequentially stacked over the substrate inside the first opening portion, and

wherein the transistor is covered with the second insulating layer.

3. A light-emitting device according to claim 2 ,

wherein the third insulating layer comprises silicon nitride containing oxygen.

4. A light-emitting device comprising:

a substrate;

a first insulating layer provided over the substrate;

a transistor provided over the first insulating layer;

a second insulating layer having a first opening portion to expose a portion of the substrate;

a third insulating layer covering the first opening portion and in contact with the second insulating layer;

a first electrode provided over the third insulating layer;

a bank layer having a second opening portion so that a portion of the first electrode is exposed;

a light-emitting layer provided over the exposed portion of the first electrode in the second opening portion; and

a second electrode provided over the light-emitting layer,

wherein the transistor is covered with the second insulating layer.

5. A light-emitting device according to claim 1 ,

wherein the second insulating layer includes a layer made from silicon nitride containing oxygen.

6. A light-emitting device according to claim 1 ,

wherein the first insulating layer includes a layer made from silicon nitride containing oxygen.

7. A light-emitting device according to claim 1 ,

wherein the light-emitting device is applied to an electric appliance selected from the group consisting of a personal computer, a cellular phone, a television set, a navigation system, and a lighting system.

8. A light-emitting device according to claim 2 ,

wherein the second insulating layer includes a layer made from silicon nitride containing oxygen.

9. A light-emitting device according to claim 2 ,

wherein the first insulating layer includes a layer made from silicon nitride containing oxygen.

10. A light-emitting device according to claim 2 ,

wherein the light-emitting device is applied to an electric appliance selected from the group consisting of a personal computer, a cellular phone, a television set, a navigation system, and a lighting system.

11. A light-emitting device according to claim 4 ,

wherein the second insulating layer includes a layer made from silicon nitride containing oxygen.

12. A light-emitting device according to claim 4 ,

wherein the first insulating layer includes a layer made from silicon nitride containing oxygen.

13. A light-emitting device according to claim 4 ,

wherein the light-emitting device is applied to an electric appliance selected from the group consisting of a personal computer, a cellular phone, a television set, a navigation system, and a lighting system.

14. A light-emitting device comprising:

a substrate;

a first insulating layer provided over the substrate;

a transistor provided over the first insulating layer; and

a second insulating layer provided over the transistor, wherein the second insulating layer has a first opening portion to expose a portion of the substrate;

a third insulating layer covering the first opening portion and in contact with the second insulating layer;

a first electrode provided over the third insulating layer, and

a bank layer having a second opening portion so that a portion of the first electrode is exposed, wherein the bank layer comprises a resin material,

wherein the first electrode, a light-emitting layer, and a second electrode are stacked over the substrate inside the first opening portion.

15. A light-emitting device comprising:

a substrate;

a first insulating layer provided over the substrate;

a transistor provided over the first insulating layer;

a second insulating layer provided over the transistor, wherein the second insulating layer has a first opening portion to expose a portion of the substrate; and

a third insulating layer covering the first opening portion and in contact with the second insulating layer;

a first electrode over the third insulating layer; and

a bank layer having a second opening portion so that a portion of the first electrode is exposed,

wherein the first electrode, a light-emitting layer, and a second electrode are stacked over the substrate inside the first opening portion.

16. A light-emitting device according to claim 15 ,

wherein the third insulating layer comprises silicon nitride containing oxygen.

17. A light-emitting device comprising:

a substrate;

a first insulating layer provided over the substrate;

a transistor provided over the first insulating layer;

a second insulating layer provided over the transistor, wherein the second insulating layer has a first opening portion to expose a portion of the substrate;

a third insulating layer covering the first opening portion and in contact with the second insulating layer;

a first electrode provided over the third insulating layer;

a bank layer having a second opening portion so that a portion of the first electrode is exposed;

a light-emitting layer provided over the exposed portion of the first electrode in the second opening portion; and

a second electrode provided over the light-emitting layer.

18. A light-emitting device according to claim 14 ,

wherein the second insulating layer includes a layer made from silicon nitride containing oxygen.

19. A light-emitting device according to claim 14 ,

wherein the first insulating layer includes a layer made from silicon nitride containing oxygen.

20. A light-emitting device according to claim 14 ,

wherein the light-emitting device is applied to an electric appliance selected from the group consisting of a personal computer, a cellular phone, a television set, a navigation system, and a lighting system.

21. A light-emitting device according to claim 15 ,

wherein the second insulating layer includes a layer made from silicon nitride containing oxygen.

22. A light-emitting device according to claim 15 ,

wherein the first insulating layer includes a layer made from silicon nitride containing oxygen.

23. A light-emitting device according to claim 15 ,

wherein the light-emitting device is applied to an electric appliance selected from the group consisting of a personal computer, a cellular phone, a television set, a navigation system, and a lighting system.

24. A light-emitting device according to claim 17 ,

wherein the second insulating layer includes a layer made from silicon nitride containing oxygen.

25. A light-emitting device according to claim 17 ,

wherein the first insulating layer includes a layer made from silicon nitride containing oxygen.

26. A light-emitting device according to claim 17 ,

wherein the light-emitting device is applied to an electric appliance selected from the group consisting of a personal computer, a cellular phone, a television set, a navigation system, and a lighting system.

27. A light-emitting device comprising:

a substrate;

a first insulating layer provided over the substrate;

a transistor provided over the first insulating layer;

a second insulating layer having a first opening portion to expose a portion of the substrate;

a third insulating layer covering the first opening portion and in contact with the second insulating layer;

a first electrode provided over the third insulating layer;

a bank layer having a second opening portion so that a portion of the first electrode is exposed;

a light-emitting layer provided over the exposed portion of the first electrode in the second opening portion; and

a second electrode provided over the light-emitting layer and covering a side surface of the light-emitting layer,

wherein the transistor is covered with the second insulating layer.

28. A light-emitting device according to claim 27 ,

wherein the second insulating layer includes a layer made from silicon nitride containing oxygen.

29. A light-emitting device according to claim 27 ,

wherein the first insulating layer includes a layer made from silicon nitride containing oxygen.

30. A light-emitting device according to claim 27 ,

wherein the light-emitting device is applied to an electric appliance selected from the group consisting of a personal computer, a cellular phone, a television set, a navigation system, and a lighting system.

31. A light-emitting device comprising:

a substrate;

a first insulating provided over the substrate;

a transistor provided over the first insulating layer,

a second insulating layer provided over the transistor, wherein the second insulating layer has a first opening portion to expose a portion of the substrate;

a third insulating layer covering the first opening portion and in contact with the second insulating layer;

a first electrode provided over the third insulating layer;

a bank layer having a second opening portion so that a portion of the first electrode is exposed;

a light-emitting layer provided over the exposed portion of the first electrode in the second opening portion; and

a second electrode provided over the light-emitting layer and covering a side surface of the light-emitting layer.

32. A light-emitting device according to claim 31 ,

wherein the second insulating layer includes a layer made from silicon nitride containing oxygen.

33. A light-emitting device according to claim 31 ,

wherein the first insulating layer includes a layer made from silicon nitride containing oxygen.

34. A light-emitting device according to claim 31 ,

wherein the light-emitting device is applied to an electric appliance selected from the group consisting of a personal computer, a cellular phone, a television set, a navigation system, and a lighting system.

35. A light-emitting device according to claim 1 ,

wherein the third insulating layer comprises silicon nitride containing oxygen.

36. A light-emitting device according to claim 4 ,

wherein the third insulating layer comprises silicon nitride containing oxygen.

37. A light-emitting device according to claim 14 ,

wherein the third insulating layer comprises silicon nitride containing oxygen.

38. A light-emitting device according to claim 17 ,

wherein the third insulating layer comprises silicon nitride containing oxygen.

39. A light-emitting device according to claim 27 ,

wherein the third insulating layer comprises silicon nitride containing oxygen.

40. A light-emitting device according to claim 31 ,

wherein the third insulating layer comprises silicon nitride containing oxygen.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 6, 2005
From: KAWAKAMI, TAKAHIRO; TSUCHIYA, KAORU; NISHI, TAKESHI; HIRAKATA, YOSHIHARU; KIDA, KEIKO; SATO, AYUMI; YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 016436/0672 →
Priority Claims (1)
JP 2004-017536 · Jan 26, 2004 · national
Continuity (1)
Related Publication 20050161680A1 · Jul 28, 2005