Particle trap for electrostatic chuck
Wafer supporting apparatus, including an electrostatic chuck for supporting the wafer. The apparatus further includes an electrostatic shield which is positioned in proximity to the chuck and the wafer, and a voltage source which is coupled to apply an electric field between the chuck and the wafer. The voltage source applies one or more potentials to the electrostatic shield so as to prevent penetration of particles to the wafer.
1. Wafer supporting apparatus, comprising:
an electrostatic chuck for supporting the wafer;
an electrostatic shield which is positioned in proximity to the chuck and the wafer, the electrostatic shield having multiple electrodes, a first one of which is positioned above the electrostatic chuck, a second one of which is configured and positioned to accommodate the chuck, and a third one of which is configured and positioned to surround the second electrode and the chuck; and
a voltage source which is coupled to apply an electric field between the chuck and the wafer, and to apply one or more potentials to the electrostatic shield so as to prevent penetration of particles to the wafer.
2. The apparatus according to claim 1 , wherein the electrodes of the electrostatic shield are coupled respectively to the one or more potentials so as to generate a guard field around the wafer.
3. The apparatus according to claim 1 , wherein the second one of the electrodes of the electrostatic shield comprises an electrode which receives the particles.
4. The apparatus according to claim 1 , wherein the first one of the electrodes of the electrostatic shield includes an aperture allowing passage of investigative particles for inspection of the wafer.
5. The apparatus according to claim 1 , wherein the electric field acts to attract the particles to the wafer, and wherein the one or more potentials generate a guard field which counteracts the attraction.
6. A method for supporting a wafer, comprising:
positioning the wafer in an electrostatic chuck;
positioning a multi-electrode electrostatic shield in proximity to the electrostatic chuck and the wafer;
applying an electric field between the chuck and the wafer; and
applying different potentials to each electrode of the electrostatic shield so as to prevent penetration of particles to the wafer and to assist in supporting the wafer in the electrostatic chuck.
7. The method according to claim 6 , wherein one of the electrodes of the electrostatic shield includes an aperture, and further comprising allowing passage of investigative particles for inspection of the wafer through the aperture.
8. The method according to claim 6 , wherein the electric field acts to attract the particles to the wafer, and wherein the different potentials generate a guard field which counteracts the attraction.