Silicon based on-chip photonic band gap cladding waveguide
A waveguide structure includes a core structure that has low index materials. A photonic crystal cladding structure utilized in guiding optical modes in the core. The photonic crystal cladding structure includes alternating layers of Si and Si 3 N 4 .
1. A waveguide structure comprising:
a core structure comprising low index materials;
a photonic crystal cladding structure utilized in guiding optical modes in said core, said photonic crystal cladding structure comprises alternating layers of Si and Si 3 N 4 , said cladding structure having a thickness of less than 2 microns, said waveguide structure being configured on-chip.
2. The waveguide structure of claim 1 , wherein said core structure comprises silicon dioxide.
3. The waveguide structure of claim 1 , wherein said core structure comprises a size of 2.5 microns square.
4. The waveguide structure of claim 1 , wherein said photonic crystal cladding structure is fabricated with a CMOS-compatible process.
5. The waveguide structure of claim 1 , wherein said alternating layers of Si and Si 3 N 4 are deposited using LPCVD method.
6. The waveguide structure of claim 1 , wherein said alternating layers comprises a large PBG and high reflectivity greater than 99%.
7. The waveguide structure of claim 1 , wherein said core structure is fabricated using the Low Temperature Oxide (LTO) method.
8. A method of forming a waveguide structure comprising:
forming a core structure comprising low index materials;
forming a photonic crystal cladding structure utilized in guiding optical modes in said core, said photonic crystal cladding structure comprises alternating layers of Si and Si 3 N 4 , said cladding structure having a thickness of less than 2 microns, said waveguide structure being configured on-chip.
9. The method of claim 8 , wherein said core structure comprises silicon dioxide.
10. The method of claim 8 , wherein said core structure comprises a size of 2.5 microns square.
11. The method of claim 8 , wherein said photonic crystal cladding structure is fabricated with a CMOS-compatible process.
12. The method of claim 8 , wherein said alternating layers of Si and Si 3 N 4 are deposited using LPCVD method.
13. The method of claim 8 , wherein said alternating layers comprises a large PBG and high reflectivity greater than 99%.
14. The method of claim 8 , wherein said core structure is fabricated using the Low Temperature Oxide (LTO) method.