Ceramic electronic device and production method thereof

1. A ceramic electronic device comprising a dielectric layer, wherein:

said dielectric layer includes a main component expressed by a composition formula of Ba m TiO 2+m , wherein “in” is 0.995≦m≦1.010 and a ratio of Ba and Ti is 0.995≦Ba/Ti≦1.010, and a subcomponent;

said subcomponent includes

an oxide of Al, and

an oxide of Si or an oxide of oxide of R, where R is at least one selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and

at least a part of said oxide of Al and at least a part of said oxide of Si or said oxide of R form a secondary phase being different from a main phase mainly composed of said main component, and said secondary phase is included in said dielectric layer.

2. A ceramic electronic device comprising a dielectric layer, wherein:

said dielectric layer includes a main component expressed by a composition formula of Ba m TiO 2+m , wherein “m” satisfies 0.995≦m≦1.010 and a ratio of Ba and Ti satisfies 0.995≦Ba/Ti≦1.010, and a subcomponent;

said subcomponent includes

an oxide of Al, an oxide of Si and an oxide of oxide of R, where R is at least one kind selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and

at least a part of said oxide of Al, said oxide of Si and said oxide of R form a secondary phase being different from a main phase mainly composed of said main component, and said secondary phase is included in said dielectric layer.

3. The ceramic electronic device as set forth in claim 1 , wherein a content of said oxide of Al is 0 to 4.0 moles, excluding 0, in terms of Al 2 O 3 with respect to 100 moles of said main component.

4. The ceramic electronic device as set forth in claim 1 , wherein a content of said oxide of Si is 0.5 to 10 moles in terms of SiO 2 with respect to 100 moles of said main component.

5. The ceramic electronic device as set forth in claim 1 , wherein a content of said oxide of R is 0.2 to 7 moles in terms of R 2 O 3 with respect to 100 moles of said main component.

6. The ceramic electronic device as set forth in claim 1 , wherein:

said dielectric layer furthermore includes

a subcomponent including at least one kind selected from MgO, CaO, BaO and SrO in a amount of 0 to 3.0 moles, excluding 0, with respect to 100 moles of said main component, and

a subcomponent including at least one kind selected from V 2 O 5 , MoO 3 and WO 3 in a amount of 0.01 to 0.5 mole with respect to 100 moles of said main component.

7. The ceramic electronic device as set forth in claim 6 , wherein said dielectric layer furthermore includes a subcomponent including CaZrO 3 or CaO+ZrO 2 in an amount of 5 moles or smaller, excluding 0, with respect to 100 moles of said main component.

8. A production method of a ceramic electronic device as set forth in claim 1 , comprising the steps of:

obtaining a preliminarily fired powder by performing preliminary firing without a compound of Al, a compound of Si and/or a compound of R, where R is at least one kind selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu;

obtaining a pre-fired powder by adding said compound of Al, said compound of Si and/or said compound of R to said preliminarily fired powder; and

firing said pre-fired powder.

9. The production method of a ceramic electronic device as set forth in claim 1 , comprising the steps of:

obtaining a primary paste without a compound of Al, a compound of Si and/or a compound of R, where R is at least one kind selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and

obtaining a secondary paste by adding said compound of Al, said compound of Si and/or said compound of R to said primary paste.

10. The ceramic electronic device as set forth in claim 2 , wherein a content of said oxide of Al is 0 to 4.0 moles, excluding 0, in terms of Al 2 O 3 with respect to 100 moles of said main component.

11. The ceramic electronic device as set forth in claim 2 , wherein a content of said oxide of Si is 0.5 to 10 moles in terms of SiO 2 with respect to 100 moles of said main component.

12. The ceramic electronic device as set forth in claim 2 , wherein a content of said oxide of R is 0.2 to 7 moles in terms of R 2 O 3 with respect to 100 moles of said main component.

13. The ceramic electronic device as set forth in claim 2 , wherein:

said dielectric layer furthermore includes

a subcomponent including at least one kind selected from MgO, CaO, BaO and SrO in a amount of 0 to 3.0 moles, excluding 0, with respect to 100 moles of said main component, and

a subcomponent including at least one kind selected from V 2 O 5 , MoO 3 and WO 3 in a amount of 0.01 to 0.5 mole with respect to 100 moles of said main component.

14. A production method of a ceramic electronic device as set forth in claim 2 , comprising the steps of:

obtaining a preliminarily fired powder by performing preliminary firing without a compound of Al, a compound of Si and/or a compound of R, where is at least one kind selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu;

obtaining a pre-fired powder by adding said compound of Al, said compound of Si and/or said compound of R to said preliminarily fired powder; and

firing said pre-fired powder.

15. The production method of a ceramic electronic device as set forth in claim 2 , comprising the steps of:

obtaining a primary paste without a compound of Al, a compound of Si and/or a compound of R, where R is at least one kind selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and

obtaining a secondary paste by adding said compound of Al, said compound of Si and/or said compound of R to said primary paste.