Thin-film semiconductor device, electro-optical device, and electronic apparatus
A thin-film semiconductor device includes, on the same substrate, a thin-film transistor, in which an active layer, a gate insulating film, and a gate electrode are laminated, and a capacitive element, in which a first electrode formed using a semiconductor film formed on the same layer as the active layer, a dielectric film formed on the same layer as the gate insulating film, and a second electrode formed on the same layer as the gate electrode are laminated. In the capacitive element, in plan view, the dielectric film has a first region that is formed in a region inside outer circumferences of the first and second electrodes and that has a film thickness smaller than that of the gate insulating film, and a second region that is formed in a region outside the first region and that has a film thickness larger than that of the first region.
1. A thin-film semiconductor device comprising, on the same substrate:
a thin-film transistor, in which an active layer, a gate insulating film, and a gate electrode are laminated; and
a capacitive element, in which a first electrode formed using a semiconductor film formed on the same layer as the active layer, a dielectric film formed on the same layer as the gate insulating film, and a second electrode formed on the same layer as the gate electrode are laminated,
wherein, in the capacitive element, in plan view, the dielectric film has a first region that is formed in a region inside outer circumferences of the first and second electrodes and that has a film thickness smaller than that of the gate insulating film, and a second region that is formed in a region outside the first region and that has a film thickness larger than that of the first region.
2. The thin-film semiconductor device according to claim 1 ,
wherein a film thickness of the dielectric film in the second region is substantially equal to that of the gate insulating film.
3. The thin-film semiconductor device according to claim 1 ,
wherein, in the capacitive element, in plan view, the second electrode is formed in a region inside the first electrode, and the first region is formed in a region inside the second electrode.
4. The thin-film semiconductor device according to claim 1 ,
wherein, in the capacitive element, in plan view, the first electrode is formed in a region inside the second electrode, and the first region is formed in a region inside the first electrode.
5. The thin-film semiconductor device according to claim 1 ,
wherein the thin-film transistor has the active layer, the gate insulating film, and the gate electrode, which are sequentially laminated on the substrate, and
the capacitive element has the first electrode, the dielectric film, and the second electrode, which are sequentially laminated on the substrate.
6. An electro-optical device comprising:
the thin-film semiconductor device according to claim 1 as an electro-optical device substrate; and
an electro-optical material that is held on the substrate for an electro-optical device.
7. The electro-optical device according to claim 6 ,
wherein the electro-optical material is liquid crystal that is held between the substrate for an electro-optical device and a counter substrate disposed to face the substrate for an electro-optical device, and
the thin-film transistor and the capacitive element are provided in each of a plurality of pixels disposed in a matrix shape.
8. The electro-optical device according to claim 6 ,
wherein the electro-optical material is an organic electroluminescent material provided on the substrate for an electro-optical device, and
the thin-film transistor and the capacitive element are provided in each of a plurality of pixels disposed in a matrix shape.
9. An electronic apparatus comprising the electro-optical device according to claim 6 .