Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate ( 17 )) and a layer including the element (peeled layer ( 13 )) is filled with coagulant (typically an adhesive) that serves as a second bonding member ( 16 ), and the substrate used as a form (third substrate ( 17 )) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer ( 13 )) by the coagulated adhesive (second bonding member ( 16 )) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
1. A method of manufacturing a semiconductor device, comprising steps of:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming an element layer that includes a semiconductor element over the second layer;
bonding a second substrate to the element layer using a first bonding member to sandwich the element layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer;
bonding a third substrate to the second layer using a second bonding member to sandwich the element layer between the second substrate and the third substrate;
separating at least the second from the element layer; and
separating at least the entire third substrate from the element layer.
2. A method according to claim 1 , wherein the second substrate is separated from the element layer by dissolving the first bonding member with a solvent.
3. A method according to claim 1 , wherein the second bonding member adheres to the element layer at a stronger adhesion than its adhesion to the third substrate.
4. A method according to claim 1 , wherein the first bonding member is a photosensitive bonding member and the second substrate is separated from the element layer by irradiating the first bonding member with light.
5. A method according to claim 1 , wherein the second bonding member is a photosensitive bonding member.
6. A method according to claim 1 , wherein one of a glass substrate, a quartz substrate, and a metal substrate is used for the first substrate and the second substrate whereas the third substrate is a plastic substrate.
7. A method according to claim 1 , wherein the third substrate is a plastic film with a film that contains aluminum, oxygen and nitrogen formed on its surface.
8. A method of manufacturing a semiconductor device, comprising steps of:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming an element layer that includes a semiconductor element over the second layer;
bonding a second substrate to the second layer with a first bonding member interposed therebetween so as to sandwich the element layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer;
bonding a third substrate to the element layer with a second bonding member interposed therebetween so as to sandwich the element layer between the second substrate and the third substrate;
separating at least the second substrate front element layer; and
separating at least the entire third substrate from the element layer.
9. A method according to claim 8 , wherein the first bonding member adheres to the element layer at a stronger adhesion than its adhesion to the second substrate.
10. A method according to claim 8 , wherein the second bonding member is a photosensitive bonding member and the third substrate is separated from the second bonding member by irradiating the member with light.
11. A method according to claim 8 , wherein the first bonding member is a photosensitive bonding member and the second substrate is separated from the first bonding member by irradiating the first bonding member with light.
12. A method according to claim 8 , wherein one of a glass substrate and a quartz substrate is used for the first substrate.
13. A method according to claim 8 , wherein the second substrate is a plastic film with a film that contains aluminum, oxygen and nitrogen formed on its surface.
14. A method according to claim 8 , wherein the third substrate is a plastic film with a film that contains aluminum, oxygen and nitrogen on its surface.
15. A method of manufacturing a semiconductor device, comprising:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming a peeled layer that includes a semiconductor element over the second layer;
bonding a second substrate to the peeled layer using a first bonding member to sandwich the peeled layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer:
bonding a third substrate to the second layer using a second bonding member to sandwich the peeled layer between the second substrate and the third substrate;
separating the second substrate from the peeled layer to form the peeled layer that uses the second bonding member as a supporter; and
separating at least the entire third substrate from the peeled layer.
16. A method according to claim 15 , wherein the material of the first substrate and second substrate has a rigidity higher than the rigidity of the third substrate.
17. A method according to claim 15 , wherein the second substrate is separated from the peeled layer by dissolving the first bonding member with a solvent to remove the member.
18. A method according to claim 15 , wherein the first bonding member is a photosensitive bonding member and the second substrate is separated from the peeled layer by irradiating the first bonding member with light.
19. A method according to claim 1 , further comprising forming a protective film on the second bonding member.
20. A method according to claim 1 , further comprising forming a protective film on the second bonding member, wherein the protective film is one of silicon nitride film and a silicon oxynitride film.
21. A method of manufacturing a semiconductor device, comprising steps of:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming an element layer that includes a semiconductor element over the second layer;
bonding a second substrate to the element layer using a first bonding member to sandwich the element layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer;
bonding a third substrate to the second layer using a second bonding member to sandwich the element layer between the second substrate and the third substrate;
separating the element layer from the second substrate by removing the first bonding member; and
separating at least the entire third substrate from the element layer.
22. A method according to claim 21 wherein the first bonding member is attached to the separated element layer.
23. A method according to claim 21 wherein the third substrate is attached to the separated element layer with the second bonding member.
24. A method according to claim 21 further comprising a step of forming a protective film between the third substrate and the second bonding member.
25. A method according to claim 21 wherein a protective film is attached to the separated element layer with the second bonding member.
26. A method of manufacturing a semiconductor device, comprising steps of:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming an element layer that includes a semiconductor element over the second layer;
bonding a second substrate to the element layer with a first bonding member interposed therebetween so as to sandwich the element layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer;
bonding a third substrate to the second layer with a second bonding member interposed therebetween to sandwich the element layer between the second substrate and the third substrate;
separating at least the second substrate and the first bonding member from the element layer; and
separating at least the entire third substrate from the element layer.
27. A method according to claim 26 , wherein in the material of the first substrate and second substrate has a rigidity higher than the rigidity of the third substrate.
28. A method according to claim 26 , wherein the second substrate is separated from the element layer by dissolving the first bonding member with a solvent to remove the member.
29. A method according claim 26 , wherein the first bonding member is a photosensitive bonding member and the second substrate separated from the peeled layer by irradiating the first bonding member with light.