Semiconductor apparatus with improved yield

1. A semiconductor apparatus comprising:

a pad;

a first line layer placed beneath the pad, such that the pad and the first line layer overlap; and

a plurality of contacts, arranged as a plurality of intersecting strips as viewed from above, disposed immediately beneath the pad,

wherein the plurality of contacts comprise:

a plurality of first linear conductors, disposed parallel to each other in a first direction within the first line layer, and

a plurality of second linear conductors, disposed parallel to each other in a second direction crossing the first direction, above the first line layer; and

wherein the pad is disposed on the second conductors.

2. The semiconductor apparatus of claim 1 , wherein a bonding position on the pad directly overlaps one of the plurality of contacts.

3. The semiconductor apparatus of claim 1 , wherein the pad is electrically connected with a second pad.

4. The semiconductor apparatus of claim 1 , further comprising

a first line connected to the pad and

a second line connected to a second pad;

wherein the first line is a power line and a sectional area of the first line connected to the pad is greater than a sectional area of and the second line connected to the second pad.

5. The semiconductor apparatus of claim 1 , further comprising:

a plurality of first pads and a plurality of second pads;

wherein the plurality of second pads are laterally closer to an edge of the semiconductor apparatus than the plurality of first pads;

wherein at least one of the plurality of second pads is disposed on one of the plurality of contacts; and

wherein a lateral width of each of the plurality of first pads is smaller than a lateral width of each of the plurality of second pads.

6. The semiconductor apparatus of claim 1 , wherein one of the plurality of contacts is disposed directly beneath a probing position on the pad.

7. The semiconductor apparatus of claim 1 , further comprising:

a second line layer disposed below the first line layer such that the pad and the second line layer overlap;

wherein a distance between the first line layer and the second line layer is longer than a distance between the pad and the first line layer.

8. The semiconductor apparatus of claim 1 , further comprising:

a second line layer disposed below the first line layer such that the second line layer and the pad overlap; and

a third line layer disposed below the first line layer such that the third layer and the pad do not overlap;

wherein a distance between the first line layer and the second line layer is longer than a distance between the first line layer and the third line layer.

9. A semiconductor apparatus comprising:

a pad;

a first line layer placed beneath the pad, such that the pad and the first line layer overlap;

a plurality of contacts, arranged in a lattice as viewed from above, disposed immediately beneath the pad; and

a second line layer disposed below the first line layer, wherein the second line layer is laterally spaced from the pad such that the pad and the second line layer do not overlap.

10. The semiconductor apparatus of claim 9 , further comprising an internal circuit disposed below the first line layer and laterally spaced such that the internal circuit and the pad overlap.

11. The semiconductor apparatus of claim 10 , further comprising

a third line layer, wherein the third line layer is not disposed between the first line layer and the internal circuit.

12. A semiconductor apparatus comprising:

a pad;

a first line layer, disposed beneath the pad, comprising a first metal line disposed on the first line layer such that the pad and the first metal line overlap;

a plurality of contacts, arranged as a plurality of intersecting strips as viewed from above, disposed immediately beneath the pad; and

a second line layer, disposed below the first line layer, comprising a second metal line disposed on the second line layer such that the pad and the second metal line overlap;

wherein a distance between the first metal line and the second metal line is longer than a distance between the pad and the first metal line.

13. The semiconductor apparatus of claim 12 , further comprising:

a third line layer, disposed below the first line layer, comprising a third metal line disposed on the third line layer such that the third metal line and the pad do not overlap;

wherein a distance between the first metal line and the second metal line is longer than a distance between the first metal line and the third metal line.