Laser diode with phase matching grating
A semiconductor diode laser that generates light at wavelengths longer than conventional diode lasers. The laser includes a first gain element that generates a first “pump” laser beam having a first optical frequency and a second gain element that generates a second “pump” laser beam having a second optical frequency. The first and second pump beams are mixed in a third section to create a wave of nonlinear polarization oscillating at the difference frequency of the first two beams. Power from this nonlinear polarization wave is coupled by a near-field phase grating to excite an electromagnetic output beam which propagates perpendicular to the laser axis. The frequency of this output beam may be much smaller than either pump beam.
1. A semiconductor laser, comprising:
a substrate;
a first optical gain element that is fabricated on top of said substrate and generates a first light beam having a first optical frequency;
a second optical gain element that is fabricated on top of said substrate and generates a second light beam having a second optical frequency;
an optical frequency mixer that is coupled to said substrate and said first and second gain elements and mixes said first and second light beams to generate a polarization wave at a third optical frequency; and
a near-field phase grating that is adjacent to said first and second optical gain elements and phase modulates the polarization wave to couple a power from the polarization wave to an electromagnetic wave that propagates at the third optical frequency, the electromagnetic wave propagates in a direction essentially perpendicular to a propagation direction of the first and second light beams.
2. The laser of claim 1 , wherein the third optical frequency is in the mid-infrared, long-infrared or Terahertz regions.
3. The laser of claim 1 , wherein said optical frequency mixer includes a waveguide optically coupled to said first and second gain elements.
4. The laser of claim 1 , wherein the semiconductor laser is fabricated with group III-V material.
5. A semiconductor laser, comprising: a substrate;
a first optical gain element that is fabricated on top of said substrate and generates a first light beam having a first frequency;
a second optical gain element that is fabricated on top of said substrate and generates a second light beam having a second frequency;
mixing means for mixing the first and second light beams to create a polarization wave at a third optical frequency and is coupled to said substrate, and;
phase modulation means for phase modulating the polarization wave for coupling a power of the polarization wave to an electromagnetic wave that propagates at the third optical frequency and is adjacent to said first and second optical gain elements, the electromagnetic wave propagates in a direction essentially perpendicular to a propagation direction of the first and second light beams.
6. The laser of claim 5 , wherein the third optical frequency is in mid-infrared, long-infrared or Terahertz regions.
7. The laser of claim 5 , wherein said mixing means includes a waveguide for mixing said first and second light beams.
8. The laser of claim 5 , wherein the semiconductor laser is fabricated with group III-V material.
9. A method for operating a semiconductor laser, comprising:
generating a first light beam having a first optical frequency from a first optical gain element fabricated on top of a substrate;
generating a second light beam having a second optical frequency from a second optical gain element fabricated on top of the substrate;
mixing the first and second light beams to create a polarization wave at a third optical frequency, and,
phase modulating the polarization wave with a phase grating that is adjacent to the first and second optical elements to couple a power of the polarization wave to an electromagnetic wave that propagates at the third optical frequency, the electromagnetic wave propagates in a direction essentially perpendicular to a propagation direction of the first and second light beams.
10. The method of claim 9 , wherein the third optical frequency is in the mid-infrared, long-infrared or Terahertz regions.
11. The method of claim 9 , wherein the first and second light beams are mixed in a waveguide coupled to the substrate.