Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon
Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
1. A method of forming a hemispherical grained silicon layer on a substrate, comprising:
introducing a silicon-containing precursor and a carrier gas into a single substrate chemical vapor deposition chamber; and
thermally decomposing the silicon-containing precursor to deposit a hemispherical grained silicon layer on the substrate, wherein the substrate is supported on a substrate support in the chamber, the substrate support is maintained at a temperature between about 670° C. and about 710° C., and the chamber is maintained at a pressure between about 100 Torr and about 350 Torr during the deposition.
2. The method of claim 1 , wherein the silicon-containing precursor is introduced into the chamber at a rate between about 50 sccm and about 400 sccm and the carrier gas is introduced into the chamber at a rate between about 3000 sccm and about 20000 sccm.
3. The method of claim 1 , wherein the silicon-containing precursor is silane or disilane.
4. The method of claim 1 , wherein the carrier gas comprises nitrogen (N 2 ).
5. The method of claim 4 , wherein the carrier gas further comprises hydrogen (H 2 ).
6. The method of claim 1 , wherein the hemispherical grained silicon layer has a refractive index of between about 3.0 and about 3.7.
7. The method of claim 1 , wherein the hemispherical grained silicon layer comprises silicon having a grain size between about 450 Å and about 700 Å.
8. The method of claim 1 , further comprising doping the hemispherical grained silicon layer.
9. A method of forming a nanocrystalline grain-sized polysilicon layer on a substrate, comprising:
introducing a silicon-containing precursor and a carrier gas into a single substrate chemical vapor deposition chamber;
thermally decomposing the silicon-containing precursor to deposit a nanocrystalline grain-sized polysilicon layer on the substrate, wherein the substrate is supported on a substrate support in the chamber, the substrate support is maintained at a temperature between about 700° C. and about 730° C., and the chamber is maintained at a pressure between about 150 Torr and about 350 Torr during the deposition; and
annealing the nanocrystalline grain-sized polysilicon layer.
10. The method of claim 9 , further comprising doping the nanocrystalline grain-sized polysilicon layer during or after the deposition of the nanocrystalline grain-sized polysilicon layer.
11. The method of claim 9 , wherein the silicon-containing precursor has a reaction activation energy of less than about 1 eV at a substrate support temperature of less than about 750° C.
12. The method of claim 9 , wherein the silicon-containing precursor is disilane and the carrier gas comprises nitrogen (N 2 ) and hydrogen (H 2 ).
13. The method of claim 9 , wherein the nanocrystalline grain-sized polysilicon layer comprises silicon having a grain size between about 70 Å and about 120 Å.
14. A method of forming a nanocrystalline grain-sized polysilicon layer on a substrate, comprising:
introducing a silicon-containing precursor and a carrier gas into a single substrate chemical vapor deposition chamber, wherein the silicon-containing precursor is introduced into the chamber at a first flow rate;
thermally decomposing the silicon-containing precursor to deposit a first nanocrystalline grain-sized polysilicon layer on the substrate, wherein the substrate is supported on a substrate support in the chamber, the substrate support is maintained at a temperature between about 700° C. and about 730° C., and the chamber is maintained at a pressure between about 150 Torr and about 350 Torr during the deposition; and
reducing the flow rate of the silicon-containing precursor into the single substrate chemical vapor deposition chamber, and depositing a second nanocrystalline grain-sized polysilicon layer on the first nanocrystalline grain-sized silicon layer.
15. The method of claim 14 , further comprising annealing the first and second nanocrystalline grain-sized polysilicon layers.
16. The method of claim 14 , further comprising doping the first and second nanocrystalline grain-sized polysilicon layers during or after the deposition of the layers.
17. The method of claim 14 , wherein the second nanocrystalline grain sized polysilicon layer has a surface roughness of less than about 3 nm.
18. The method of claim 14 , wherein the first flow rate of the silicon-containing precursor is between about 80 sccm and about 200 sccm, and the flow rate of the silicon-containing precursor is reduced to between about 10 sccm and about 70 sccm.
19. The method of claim 14 , wherein the nanocrystalline grain-sized polysilicon layers comprise silicon having a grain size between about 70 Å and about 120 Å.
20. The method of claim 14 , wherein the silicon-containing precursor is disilane.