Core-shell nanocrystallite comprising tellurium-containing nanocrystalline core and semiconductor shell
Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.
1. A nanocrystallite comprising
a nanocrystalline core comprising MTe,
an overcoating including a semiconductor material,
wherein M is selected from the group consisting of Cd, Zn, Mg, and Hg, and the nanocrystallite photoluminesces with a quantum efficiency of at least 20%.
2. The nanocrystallite according to claim 1 , wherein the nanocrystallite photoluminesces with a quantum efficiency of at least 30%.
3. The nanocrystallite according to claim 1 , wherein the nanocrystallite photoluminesces with a quantum efficiency of at least 40%.
4. The nanocrystallite according to claim 1 , wherein the nanocrystallite photoluminesces with a quantum efficiency of at least 50%.
5. The nanocrystallite according to claim 1 , wherein the nanocrystallite photoluminesces with a quantum efficiency of at least 60%.
6. The nanocrystallite according to claim 1 , wherein the nanocrystallite photoluminesces with a quantum efficiency of at least 70%.
7. The nanocrystallite according to claim 1 , wherein the nanocrystallite is a member of a population having a size distribution with a standard deviation no greater than 15% of a mean diameter of the population.
8. The nanocrystallite according to claim 1 , wherein the nanocrystallite comprises CdTe.
9. The nanocrystallite according to claim 8 , wherein the nanocrystallite photoluminesces at a wavelength in the range of 435 to 800 nm.
10. The nanocrystallite according to claim 1 , wherein the nanocrystallite photoluminesces with a full-width at half maximum (FWHM) of 70 nm or less.
11. The nanocrystallite according to claim 10 , wherein the FWHM is 45 nm or less.
12. A nanocrystallite comprising
a nanocrystalline core comprising MTe,
an overcoating including a semiconductor material,
wherein M is selected from the group consisting of Cd, Zn, Mg, and Hg, and the nanocrystallite photoluminesces with a quantum efficiency of at least 20%, wherein the nanocrystallite is a member of a population having a size distribution with a standard deviation no greater than 15% of a mean diameter of the population, and the nanocrystallite photoluminesces with a full-width at half maximum (FWHM) of 70 nm or less.
13. The nanocrystallite according to claim 12 , wherein the nanocrystallite photoluminesces with a quantum efficiency of at least 50%.
14. The nanocrystallite according to claim 12 , wherein the nanocrystallite photoluminesces with a quantum efficiency of at least 60%.
15. The nanocrystallite according to claim 12 , wherein the nanocrystallite photoluminesces with a quantum efficiency of at least 70%.
16. The nanocrystallite according to claim 12 , wherein the nanocrystallite comprises CdTe.
17. The nanocrystallite according to claim 16 , wherein the nanocrystallite photoluminesces at a wavelength in the range of 435 to 800 nm.
18. The nanocrystallite according to claim 12 , wherein the FWHM is 45 nm or less.