Integrated coupler
A non-directional coupler including a semiconductor junction in series with a capacitor, the semiconductor junction being formed so that the threshold frequency short of which it behaves as a rectifier is smaller than the coupler's operating frequency.
1. A non-directional coupler comprising a semiconductor junction in series with a capacitor, the semiconductor junction being formed so that a threshold frequency of the semiconductor junction, short of which the semiconductor junction behaves as a rectifier, is smaller than the coupler's operating frequency, wherein said capacitor has a value greater than 10 picofarads.
2. The coupler of claim 1 , wherein said semiconductor junction is formed in an epitaxial layer, the thickness of which conditions the threshold frequency from which the junction no longer has a rectifying function.
3. The coupler of claim 1 , wherein the semiconductor junction is sized to exhibit, at the coupler's operating frequency, a series capacitance on the order of a few hundreds of femtofarads and a series resistance on the order of a few tens of ohms.
4. A non-directional coupler comprising a semiconductor junction in series with a capacitor, the capacitor having a value greater than 10 picofarads, the semiconductor junction having a threshold frequency below which the semiconductor junction behaves as a rectifier, wherein the threshold frequency is less than the coupler's operating frequency.
5. The coupler of claim 4 , wherein the semiconductor junction is disposed in an epitaxial layer, wherein a thickness of the epitaxial layer determines the threshold frequency above which the semiconductor junction no longer functions as a rectifier.
6. The coupler of claim 4 , wherein the semiconductor junction is sized to exhibit, at the coupler's operating frequency, a series capacitance on the order of a few hundreds of femtofarads and a series resistance on the order of a few tens of ohms.