Semiconductor device having nickel silicide and method of fabricating nickel silicide
A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed thereunder. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.
1. A semiconductor device having nickel silicide, comprising:
a semiconductor substrate;
a plurality of doped regions disposed in the semiconductor substrate; and
a plurality of nickel silicides disposed in the doped regions, each nickel silicide comprising a nickel monosilicide region comprising nickel monosilicide disposed on a surface of each doped region, and a nickel disilicide pocket comprising nickel disilicide, wherein the nickel disilicide pocket is uniform, disposed on an interface between each nickel monosilicide region and each doped region.
2. The semiconductor device having nickel silicide of claim 1 , wherein nickel disilicide has a weight percentage of between 1% and 10%.
3. The semiconductor device having nickel silicide of claim 1 , wherein the doped regions comprise source/drain regions.
4. The semiconductor device having nickel silicide of claim 1 , further comprising a plurality of gates disposed on the semiconductor substrate.
5. A semiconductor device having nickel silicide, comprising:
a semiconductor substrate;
a plurality of doped regions disposed in the semiconductor substrate; and
a plurality of nickel silicide regions disposed in the doped regions, each nickel silicide region comprising nickel disilicide wherein the nickel silicide region is uniformly dispersed, and nickel disilicide has a weight percentage of between 1% and 10%.
6. The semiconductor device having nickel silicide of claim 5 , wherein the doped regions comprise source/drain regions.
7. The semiconductor device having nickel silicide of claim 5 , further comprising a plurality of gates disposed on the semiconductor substrate.