Tunable-wavelength optical filter and method of manufacturing the same
View Patent ↗A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.
1. A method of manufacturing a tunable wavelength optical filter, comprising the steps of:
(a) forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate;
(b) sequentially laminating conductive silicon films and oxide films for defining a mirror region on said first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror;
(c) forming a second sacrificial film on the resultant;
(d) sequentially laminating conductive silicon films and oxide films for defining the mirror region on said second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror;
(e) etching the rear side of said semiconductor substrate to form an opening for inserting an optical fiber thereinto;
(f) forming electrode pads for controlling the gap between said lower mirror and said upper mirror by an electrostatic force;
(g) etching the silicon film around said upper mirror in a dry etching method to expose said second sacrificial oxide film, such that said upper mirror is suspended by a connecting means; and
(h) forming an optical tuning space between said lower mirror and said upper mirror and etching said first sacrificial oxide film and said second sacrificial oxide film such that said lower mirror is floated on said semiconductor substrate.
2. The method of manufacturing the tunable wavelength optical filter according to claim 1 , further comprising the structure of lower mirror embedded type that only the upper mirror is suspended by the connecting means and the lower mirror is not floated on the semiconductor substrate, after the step (g) and before the step (h).
3. The method of manufacturing the tunable wavelength optical filter according to claim 1 , wherein said first and second sacrificial oxide films are etched by a wet etching method using a hydrogen fluoride solution or a gas phase etching method using anhydrous hydrogen fluoride which the etching speed of the sacrificial oxide film is quicker than that of the silicon film.
4. The method of manufacturing the tunable wavelength optical filter according to claim 1 , wherein said silicon film is formed so as to have a thickness of (2m+1)λ/4n (m=0, 1, 2, . . . ),
wherein λ is the wavelength of the light source, and n is the optical refractive index of the silicon film.
5. The method of manufacturing the tunable wavelength optical filter according to claim 1 , wherein said oxide film is formed so as to have a thickness of (2m+1)λ/4n (m=0, 1, 2, . . . ),
wherein λ is the wavelength of the light source, and n is the optical refractive index of the oxide film.
6. The method of manufacturing the tunable wavelength optical filter according to claim 1 , further comprising the step of forming thermal oxide films on the both sides of the semiconductor substrate, before forming said first sacrificial oxide film.
7. The method of manufacturing the tunable wavelength optical filter according to claim 1 , wherein said the step (b) comprises the steps of:
depositing a first conductive silicon film on said first sacrificial oxide film,
depositing a first oxide film on said first silicon film and patterning the first oxide film to define the mirror region;
depositing a second silicon film on said first silicon film and said patterned first oxide film;
depositing a second oxide film on said second silicon film and patterning the second oxide film to define the mirror region; and
forming a third conductive silicon film on said second silicon film and said patterned second oxide film.
8. The method of manufacturing the tunable wavelength optical filter according to claim 1 , wherein said the step (d) comprises the steps of:
depositing a first conductive silicon film on said second sacrificial oxide film,
depositing a first oxide film on said first silicon film and patterning the first oxide film to define the mirror region;
depositing a second silicon film on said first silicon film and said patterned first oxide film;
depositing a second oxide film on said second silicon film and patterning the second oxide film to define the mirror region; and
forming a third conductive silicon film on said second silicon film and said patterned second oxide film.