IP Library › Granted Patent US 7,397,830
Granted Patent B2
US 7,397,830 · App. 10/555,940 · Granted Jul 8, 2008

Semiconductor laser device

Assignee: Matsushita Electric Industrial Co., Ltd.
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Quick Facts
Patent No.
US 7,397,830
App. No.
10/555,940
Granted
Jul 8, 2008
Kind
B2
Abstract

A semiconductor laser device according to the present invention includes a mechanism section having a semiconductor laser, a first frame for holding the mechanism section and radiating heat generated in the mechanism section, a control section for controlling the mechanism section, a second frame for holding the control section and radiating heat generated in the control section, and a coupling section for insulatively coupling the first frame to the second frame.

Claims (30)

1. A semiconductor laser device comprising:

a mechanism section including a semiconductor laser;

a first frame for holding the mechanism section and radiating heat generated in the mechanism section;

a control section for controlling the mechanism section;

a second frame for holding the control section and radiating heat generated in the control section; and

a coupling section having a low thermal conductivity, for insulatively coupling the first frame to the second frame.

2. A semiconductor laser device according to claim 1 , further comprising a wiring section for electrically connecting the mechanism section to the control section.

3. A semiconductor laser device according to claim 1 , wherein the first frame has a portion coming in contact with air and heat generated in the mechanism section is radiated through the portion.

4. A semiconductor laser device according to claim 1 , wherein the second frame has a portion coming in contact with air and heat generated in the control section is radiated through the portion.

5. A semiconductor laser device according to claim 1 , wherein the mechanism section includes an optical head for performing at least one of recording and reproduction for an optical disk, and the optical head includes the semiconductor laser.

6. A semiconductor laser device according to claim 1 , wherein the first frame and the second frame are configured to prevent air in the first frame and air in the second frame from being convected.

7. A semiconductor laser device according to claim 1 , wherein at least one of the first frame and the second frame contains a material having a high thermal conductivity.

8. A semiconductor laser device according to claim 1 , wherein at least a part of a portion is subjected to surface finishing having a low radiation efficiency, the portion at which the first frame and the second frame facing each other.

9. A semiconductor laser device according to claim 1 , wherein the first frame has a first portion coming in contact with air,

the second frame has a second portion coming in contact with the air, and

at least one of the first portion and the second portion is subjected to surface finishing having a high radiation efficiency.

10. A semiconductor laser device according to claim 2 , wherein the wiring section is sealed to prevent air in the first frame and the air in the second frame from being circulated mutually.

11. A semiconductor laser device according to claim 1 , wherein the first frame has a portion coming in contact with air, and

the portion is configured to cover a part of the second frame.

12. A semiconductor laser device according to claim 1 , wherein the first frame and the second frame are disposed to provide a gap to allow air to circulate between the first frame and the second frame.

13. A semiconductor laser device according to claim 1 , wherein the coupling section contains a material having a low thermal conductivity.

14. A semiconductor laser device according to claim 1 , further comprising a heat insulating section disposed between the first frame and the second frame and formed with a material having a low thermal conductivity.

15. A semiconductor laser device according to claim 14 , wherein a gap is configured between at least one of the heat insulating section and the first frame and the heat insulating section and the second frame, and the gap is present allow air to circulate.

16. A semiconductor laser device according to claim 1 , wherein the first frame has a first portion coming in contact with air,

the second frame has a second portion coming in contact with the air, and

at least one of the first portion and the second portion is provided with a concavo-convex portion.

17. A semiconductor laser device according to claim 5 , further comprising:

a camera section;

a display section for displaying a video indicated by a video signal obtained by the camera section; and

a video processing circuit for compressing the video signal and recording the compressed video signal as video information on the optical disk by using the optical head or reproducing the video information recorded on the optical disk by using the optical head, thereby expanding the video information thus reproduced and causing the display section to display the video information thus expanded.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2006
From: ISHIBASHI, KENZO; GOTOH, KATSUMI; YUKIMASA, TAKATOSHI; ICHINOSE, MAKOTO
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 018546/0071 →
Continuity (1)
Related Publication 20060285475A1 · Dec 21, 2006