Interposer and electronic device fabrication method
An interposer 2 including a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56 ; a thin-film capacitor 12 buried in the base 10 , including a lower electrode 20 , a capacitor dielectric film 22 and an upper electrode 24 ; a first through-electrode 14 b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12 ; and a second through-electrode 14 a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12 , further including: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12 , a plurality of the first through-electrodes 14 b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48 , and said plurality of the first through-electrodes 14 b being electrically interconnected by the interconnections 48.
1. An interposer comprising a base formed of a plurality of resin layers; a thin-film capacitor buried in the base, including a lower electrode, a capacitor dielectric film formed on the lower electrode, and an upper electrode formed on the capacitor dielectric film; a first through-electrode formed through the base and electrically connected to the upper electrode of the thin-film capacitor; and a second through-electrode formed through the base and electrically connected to the lower electrode of the thin-film capacitor,
the interposer comprising:
a plurality of said thin-film capacitors formed over a first resin layer of said plurality of resin layers, and,
a plurality of said first through-electrodes formed through the base,
the interposer further comprising:
an interconnection formed over a second resin layer of said plurality of resin layers, the second resin layer being formed over said plurality of said thin-film capacitors,
said plurality of said first through-electrodes and the upper electrodes of said plurality of said thin-film capacitors are electrically connected each other by the interconnection.
2. An interposer according to claim 1 , wherein
the lower electrodes of said plurality of said thin-film capacitors are formed integrally.
3. An interposer according to claim 1 , further comprising
third through-electrode formed through the base and insulated from the thin-film capacitor.
4. An interposer according to claim 1 , further comprising
an insulating barrier film covering an upper surface, an under surface and a side surface of the thin-film capacitor, for prohibiting the diffusion of hydrogen or water.
5. An interposer according to claim 4 , wherein
the insulating barrier film is formed of an inorganic material.
6. An interposer according to claim 4 , wherein
the insulating barrier film is a amorphous film formed of the same material as the capacitor dielectric film.
7. An interposer according to claim 4 , wherein
an opening is formed in the insulating barrier film down to the upper electrode,
a conductive barrier film is formed in the opening, for prohibiting the diffusion of hydrogen or water, and
the interconnection is electrically connected to the upper electrode via the conductive barrier film.
8. An interposer according to claim 4 , wherein
an opening for exposing at least the side surface of the lower electrode is formed in the base and the insulating barrier film,
a conductive barrier film is formed in the opening, for prohibiting the diffusion of hydrogen or water,
the first through-electrode is buried in the opening with the conductive barrier film formed in, and
the first through-electrode is electrically connected to the lower electrode via the conductive barrier film.
9. An interposer according to claim 1 , wherein
the resin layer is formed of polyimide resin, epoxy resin, benzocyclobutene resin, bismaleimide-triazine resin, polytetrafluoroethylene resin, acrylic resin or diallyl phthalate resin.
10. An interposer according to claim 1 , wherein
the capacitor dielectric film is formed of a composite oxide containing at least one element of Sr, Ba, Pb, Zr, Bi, Ta, Ti, Mg and Nb.
11. An interposer according to claim 1 , wherein
the lower electrode or the upper electrode is formed of Au, Cr, Cu, W, Pt, Pd, Ru, Ru oxide, Ir, Ir oxide, Pt oxide.