Power amplifier having high heat dissipation
A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrode directly connecting the heat sink and the emitter of the HBT. The emitter electrode is a flip-chip bump, and the heat sink is a metal layer that sandwiches the HBT with the substrate. Alternatively, the emitter electrode is a backside via that penetrates the substrate, and the heat sink is a metal layer, disposed on the substrate opposite the HBT.
1. A method for manufacturing a heat dissipating power amplifier integrated circuit, the method comprising:
providing a planar substrate;
providing a heat sink for dissipating heat;
integrally forming a transistor on the substrate, the transistor comprising a collector, a base, and an emitter having an enlarged portion located laterally away from the collector and the base; and
electrically and thermally coupling the heat sink to the enlarged portion of the emitter with an emitter electrode;
wherein in a plane of the substrate, an area of the enlarged portion of the emitter is greater than an area of the emitter electrode, and the enlarged portion of the emitter has a center of area located laterally away from the collector and the base.
2. The method of claim 1 wherein forming the transistor comprises:
disposing a metallization layer on the substrate to form the emitter; and
disposing a second metallization layer to mutually connect emitters.
3. The method of claim 1 further comprising:
electrically grounding the emitter through the emitter electrode and the heat sink.
4. The method of claim 1 further comprising:
arraying a plurality of transistors and a plurality of emitter electrodes to form a functional device.
5. The method of claim 1 wherein the emitter electrode directly connects the heat sink and the enlarged portion of the emitter.