IP Library › Granted Patent US 7,420,998
Granted Patent B2
US 7,420,998 · App. 11/086,440 · Granted Sep 2, 2008

Semiconductor laser device

Assignee: Mitsubishi Denki Kabushiki Kaisha
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,420,998
App. No.
11/086,440
Granted
Sep 2, 2008
Kind
B2
Abstract

A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films are located on the four corners of the front surface electrode.

Claims (13)

1. A semiconductor laser device comprising:

a semiconductor laser having opposed front and rear surfaces and first and second end faces that are transverse to the front and rear surfaces;

a plated Au front surface electrode located on the front surface, the front surface electrode including four corners;

a plated Au rear surface electrode located on the rear surface;

a film that does not react with Au and that is located only at four of the corners of the front surface electrode, with the front surface electrode sandwiched between the semiconductor laser and the anti-adhesive film; and

a coating film that covers the first end face on a light-emitting side of the semiconductor laser device and the second end face opposite the light-emitting side of the semiconductor laser device.

2. A semiconductor laser device comprising:

a plated Au front surface electrode, the front surface electrode including four corners;

a plated Au rear surface electrode;

a film that does not react with Au and that is located only at four of the corners of the front surface electrode; and

a coating film that covers an end face of the semiconductor laser device on a light-emitting side and an end face of the semiconductor laser device opposite the light-emitting side.

3. The semiconductor laser device according to claim 1 , wherein the film that does not react with Au is selected from the group consisting of an insulating film and a Pt film.

4. The semiconductor laser device according to claim 1 , wherein the film that does not react with Au is a film formed by a vapor deposition process or a sputtering process.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2005
From: HORIE, JUNICHI
To: MITSUBISHI DENKI KABUSHIKI KAISHA
Reel/Frame 016409/0919 →
Priority Claims (2)
JP 2004-112254 · Apr 6, 2004 · national
JP 2004-372897 · Dec 24, 2004 · national
Continuity (1)
Related Publication 20050221549A1 · Oct 6, 2005