Method for manufacturing semiconductor device, and semiconductor device and electronic device
View Patent ↗It is an object of the present invention to manufacture a semiconductor device easily and to provide a semiconductor device whose cost is reduced. According to the present invention, a thin film integrated circuit provided over a base insulating layer can be prevented from scattering by providing a region where a substrate and the base insulating layer are attached firmly after removing a peeling layer. Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily. In addition, since a semiconductor device is manufactured by using a substrate except a silicon substrate according to the invention, a large number of semiconductor devices can be manufactured at a time and a semiconductor device whose cost is reduced can be provided.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming a peeling layer selectively over a first substrate wherein a portion of said first substrate is not covered by said peeling layer;
forming a first insulating layer over said peeling layer and said portion of the first substrate;
forming a thin film transistor including at least a source region and a drain region over the insulating layer;
forming a second insulating layer over the first insulating layer and the thin film transistor;
forming a first opening in the first insulating layer and the second insulating layer for exposing a part of the first substrate;
forming a second opening in the second insulating layer for exposing one of the source region and the drain region of the thin film transistor;
forming a first conductive layer over the second insulating layer, wherein the first conductive layer fills the first opening and the second opening;
forming a third opening in the first insulating layer and the second insulating layer for exposing the peeling layer;
introducing etchant to the third opening for removing the peeling layer;
peeling a stacked body including at least the thin film transistor, the second insulating layer and the first conductive layer from the first substrate; and
attaching the stacked body to a second substrate so that the first conductive layer is electrically connected to a second conductive layer provided over the second substrate.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the first substrate is any one of a glass substrate and a quartz substrate.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the peeling layer comprises any one of tungsten and molybdenum.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the peeling layer comprises any one of tungsten oxide and molybdenum oxide formed by a sputtering method in an oxygen atmosphere.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the peeling layer comprises any one of tungsten and molybdenum and the first insulating layer comprises silicon oxide.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the etchant is a gas containing halogen fluoride or a liquid containing halogen fluoride.
7. A method for manufacturing a semiconductor device comprising the steps of:
forming a peeling layer selectively over a first substrate wherein a portion of said first substrate is not covered by said peeling layer;
forming a first insulating layer over said peeling layer and said portion of the first substrate;
forming a thin film transistor including at least a source region and a drain region over the insulating layer;
forming a second insulating layer over the first insulating layer and the thin film transistor;
forming a first opening in the first insulating layer and the second insulating layer for exposing a part of the first substrate;
forming a second opening in the second insulating film for exposing one of the source region and the drain region of the thin film transistor;
forming a first conductive layer over the second insulating layer wherein the first conductive layer fills the first opening and the second opening;
forming a third opening in the first insulating layer and the second insulating layer for exposing the peeling layer;
introducing etchant to the third opening for selectively removing the peeling layer;
peeling a stacked body including at least the thin film transistor, the second insulating layer and the first conductive layer from the first substrate by using a physical means; and
attaching the stacked body to a second substrate so that the first conductive layer is electrically connected to a second conductive layer provided over the second substrate.
8. The method for manufacturing a semiconductor device according to claim 7 , wherein the first substrate is any one of a glass substrate and a quartz substrate.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein the peeling layer comprises any one of tungsten and molybdenum.
10. The method for manufacturing a semiconductor device according to claim 7 , wherein the peeling layer comprises any one of tungsten oxide and molybdenum oxide formed by a sputtering method in an oxygen atmosphere.
11. The method for manufacturing a semiconductor device according to claim 7 , wherein the peeling layer comprises any one of tungsten and molybdenum and the first insulating layer comprises silicon oxide.
12. The method for manufacturing a semiconductor device according to claim 7 , wherein the etchant is a gas containing halogen fluoride or a liquid containing halogen fluoride.
13. A method for manufacturing a semiconductor device comprising the steps of:
forming a peeling layer selectively over a first substrate wherein a portion of said first substrate is not covered by said peeling layer;
forming a first insulating layer over said peeling layer and said portion of the first substrate;
forming a thin film transistor including at least a source region and a drain region over the insulating layer;
forming a second insulating layer over the first insulating layer and the thin film transistor;
forming a first opening in the first insulating layer and the second insulating layer for exposing a part of the first substrate;
forming a second opening in the second insulating layer for exposing one of the source region and the drain region of the thin film transistor;
forming a first conductive layer over the second insulating layer, wherein the first conductive layer fills the first opening and the second opening;
peeling a stacked body including at least the thin film transistor, the second insulating layer and the first conductive layer from the first substrate; and
attaching the stacked body to a second substrate so that the first conductive layer is electrically connected to a second conductive layer provided over the second substrate.
14. The method for manufacturing a semiconductor device according to claim 13 , wherein the first substrate is any one of a glass substrate and a quartz substrate.
15. The method for manufacturing a semiconductor device according to claim 13 , wherein the peeling layer comprises any one of tungsten and molybdenum.
16. The method for manufacturing a semiconductor device according to claim 13 , wherein the peeling layer comprises any one of tungsten oxide and molybdenum oxide formed by a sputtering method in an oxygen atmosphere.
17. The method for manufacturing a semiconductor device according to claim 13 , wherein the peeling layer comprises any one of tungsten and molybdenum and the first insulating layer comprises silicon oxide.