IP Library Granted Patent US 7,429,521
Granted Patent B2
US 7,429,521 · App. 11/396,044 · Granted Sep 30, 2008

Capillary underfill of stacked wafers

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Quick Facts
Patent No.
US 7,429,521
App. No.
11/396,044
Granted
Sep 30, 2008
Kind
B2
Abstract

A plurality of wafers are aligned and stacked on a thermally variable rotary table, the table and stack are rotated, and an underfill material is disposed and cured between wafers in the stack, bonding the wafers. Corresponding wafer portions of the plurality of wafers in the stack may be singulated from the stack, and may comprise semiconductor device packages either individually or when coupled with a substrate.

Claims (14)

1. A method of forming stacked semiconductor devices, comprising:

forming an opening located about a center through a first wafer from a first substrate to a second surface;

stacking the first wafer and a second wafer according to a bonding order, the second wafer superimposing the first wafer;

securing the stack on a rotary table;

rotating the stack; and

dispensing underfill material through the opening and at a surface of the first wafer.

2. The method of claim 1 , further comprising determining a wafer bonding order of the wafers.

3. The method of claim 1 , wherein stacking the wafer further comprises aligning at least one reference point of each wafer in the stack with a reference point of another other wafer in the stack.

4. The method of claim 1 , wherein the stack includes additional wafers superimposing the other wafer and each superimposing another, each superimposing wafer having a centrally located opening larger than that of the wafer superimposed.

5. The method of claim 1 , wherein dispensing underfill material includes dispensing the underfill material at surfaces of a plurality of superimposed wafer simultaneously.

6. The method of claim 1 , further comprising rotating the stack until the underfill material distributes between adjacent surfaces and proximate to the perimeter of at least two adjacent wafer in the stack.

7. The method of claim 1 , further comprising heating the stack.

8. The method of claim 1 , further comprising curing the dispensed underfill.

9. The method of claim 1 , further comprising singulating stack wafer portions from the wafer stack.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061175/0176 →