Semiconductor device including high-k insulating layer and method of manufacturing the same
A semiconductor memory device a first dopant area and a second dopant area, the first dopant area and the second dopant area disposed in a semiconductor substrate, an insulating layer disposed in contact with the first dopant area and the second dopant area, the insulating layer including a material selected from the group consisting of Hf, Zr, Y, and Ln, and a gate electrode layer disposed on the insulating layer.
1. A semiconductor memory device comprising:
a first dopant area and a second dopant area, the first dopant area and the second dopant areas disposed in a semiconductor substrate;
an insulating layer disposed in contact with the first dopant area and the second dopant area, the insulating layer including an amorphous material comprising at least one of an Hf silicate, a Zr silicate, a Y silicate, and a Ln silicate; and
a gate electrode layer disposed on the insulating layer,
wherein the insulating layer comprises:
a tunneling oxide layer disposed in contact with the first dopant area and the second dopant area;
a data storing layer disposed on the tunneling oxide layer; and
a blocking oxide layer disposed on the data storing layer,
wherein the tunneling oxide layer consists of the amorphous material having the chemical formula ((Hf, Zr, Y or Ln)O 2 ) x (SiO 2 ) 1−x , where (0.03≦x≦0.26).
2. The semiconductor memory device of claim 1 , the amorphous material having a dielectric constant that is greater than 3.9 and less than or equal to 10.
3. The semiconductor memory device of claim 1 , the insulating layer comprising one of Al and N.
4. The semiconductor memory device of claim 1 , the insulating layer comprising the Hf silicate.
5. The semiconductor memory device of claim 1 , the insulating layer comprising the Zr silicate.
6. The semiconductor memory device of claim 1 , the insulating layer comprising the Y silicate.
7. The semiconductor memory device of claim 1 , the insulating layer comprising the Ln silicate.