Wiring board with connection electrode formed in opening and semiconductor device using the same
The invention provides a wiring board ( 2,15 ) to which a semiconductor chip ( 3 ) is to be bonded while directing a surface of the semiconductor chip toward the wiring board. The wiring board includes a connection electrode ( 14 ) that is formed on a bonding surface ( 2 a , 15 a ) to which the semiconductor chip is to be bonded and that is used to make a connection with the semiconductor chip, an insulating film ( 6 ) that is formed on the bonding surface and that has an opening ( 6 a ) to expose the connection electrode, and a low-melting-point metallic part ( 16 ) that is provided on the connection electrode in the opening and that is made of a low-melting-point metallic material whose solidus temperature is lower than that of the connection electrode.
1. A wiring board to which a semiconductor chip is to be bonded while directing a surface of the semiconductor chip toward the wiring board, the wiring board comprising:
a connection electrode formed on a bonding surface to which the semiconductor chip is to be bonded, the connection electrode being for a connection with the semiconductor chip;
an insulating film formed on the bonding surface, the insulating film having an opening to expose the connection electrode; and
a low-melting-point metallic part provided on the connection electrode in the opening, the low-melting-point metallic part being made of a low-melting-point metallic material whose solidus temperature is lower than that of the connection electrode, wherein a volume of an inside of the opening is greater than a sum of a volume of the connection electrode and a volume of the low-melting-point metallic part.
2. A semiconductor device comprising:
a wiring board; and
a semiconductor chip having a projection electrode formed on a surface on which a functional element is formed, the projection electrode being electrically connected to the functional element, the semiconductor chip being bonded to a bonding surface of the wiring board with the surface of the semiconductor chip facing the bonding surface;
the wiring board including:
a connection electrode formed on the bonding surface, the connection electrode being used to make a connection with the semiconductor chip;
an insulating film formed on the bonding surface, the insulating film having an opening to expose the connection electrode; and
a low-melting-point metallic part provided on the connection electrode in the opening, the low-melting-point metallic part being made of a low-melting-point metallic material whose solidus temperature is lower than that of the connection electrode, wherein a volume of an inside of the opening is greater than a sum of a volume of the connection electrode and a volume of the low-melting-point metallic part.