NAND flash memory devices and methods of LSB/MSB programming the same
Multiple bits are programmed in a NAND flash memory device by programming a memory cell with an LSB; storing the LSB into a cache register from the memory cell; programming the memory cell with an MSB that is stored in a main register; storing a data bit into the main register from the memory cell during a first verifying operation; storing a data bit into the cache register from the memory cell during a second verifying operation; and transferring the data bit to the main register from the cache register.
1. A method of programming multiple bits in a NAND flash memory device, comprising:
programming a memory cell with a Least Significant Bit (LSB);
storing the LSB into a cache register from the memory cell;
programming the memory cell with a Most Significant Bit (MSB) that is stored in a main register;
storing a data bit into the main register from the memory cell during a first verifying operation;
storing a data bit into the cache register from the memory cell during a second verifying operation; and
transferring the data bit to the main register from the cache register;
wherein the first verifying operation is a ‘00’ verifying operation;
wherein the second verifying operation is a ‘01’ verifying operation; and
wherein if the memory cell is conditioned in a ‘01’ state after the ‘01’ verifying operation, the data bit of the cache register is changed.
2. The method as set forth in claim 1 , wherein if the memory cell is conditioned in a ‘00’ state after the ‘00’ verifying operation, the main register is set for program inhibition.
3. The method as set forth in claim 1 , wherein the main register is set for program inhibition in accordance with the changed data bit of the cache register.
4. The method as set forth in claim 1 , wherein if a threshold voltage of the memory cell is higher than a ‘00’ verifying voltage but lower than a ‘01’ verifying voltage, after the ‘01’ verifying operation, the data bit of the cache register is maintained without change.
5. The method as set forth in claim 4 , wherein the main register is set to conduct a programming operation in accordance with the data bit of the cache register.
6. The method as set forth in claim 1 , which further comprises, after programming the LSB into the memory cell:
resetting the cache register;
loading the MSB in the cache register;
resetting the main register; and
transferring the MSB to the main register from the cache register.
7. The method as set forth in claim 6 , wherein after transferring the MSB to the main register from the cache register, the LSB is read out from the memory cell without initializing the cache register.
8. The method as set forth in claim 1 , wherein programming the LSB comprises:
resetting the cache register;
loading the LSB in the cache register;
resetting the main register;
dumping the LSB to the main register from the cache register; and
executing an LSB programming operation in accordance with the LSB of the main register.
9. The method as set forth in claim 8 , which further comprises, after the LSB programming operation:
executing a third verifying operation by applying a third verifying voltage, which is lower than a voltage of the first verifying operation, to the memory cell.
10. The method as set forth in claim 9 , wherein the third verifying operation is a ‘10’ verifying operation.
11. The method as set forth in claim 10 , wherein if the memory cell is conditioned in a ‘10’ state after the ‘10’ verifying operation, the main register is set for program inhibition.
12. A NAND flash memory device comprising:
a memory cell configured to store multi-bit data;
a main register configured to store data to be programmed in the memory cell;
a cache register configured to store data supplied from an external source;
a sensing circuit configured to enable storing data from the memory cell into the cache register during an initial read operation, storing data from the memory cell into the main register during a first verifying operation, and storing data from the memory cell into the cache register during a second verifying operation; and
a dumping circuit configured to transfer data from the cache register to the main register;
wherein the first verifying operation is a ‘00’ verifying operation;
wherein the second verifying operation is a ‘01’ verifying operation; and
wherein if the memory cell is conditioned in a ‘01’ state after the ‘01’ verifying operation, the data bit of the cache register is changed.
13. The NAND flash memory device as set forth in claim 12 , wherein if the memory cell is conditioned in a ‘00’ state after the ‘00’ verifying operation, the main register is set for program inhibition.
14. The NAND flash memory device as set forth in claim 12 , wherein if the memory cell is conditioned in a ‘01’ state after the ‘01’ verifying operation, the main register is set for program inhibition.
15. The NAND flash memory device as set forth in claim 12 , wherein if a threshold voltage of the memory cell is higher than a ‘00’ verifying voltage but lower than a ‘01’ verifying voltage, after the ‘01’ verifying operation, the main register is set to conduct a programming operation.
16. The NAND flash memory device as set forth in claim 15 , wherein the main register is set to conduct the programming operation in accordance with the data bit of the cache register.