Semiconductor integrated circuit
A semiconductor integrated circuit according to the present invention comprises an MOS substrate having a substrate region (MOS) and a source region separated from each other, a dummy MOS circuit substrate-separated from the MOS circuit and having a substrate region (dummy) and a source region (dummy) separated from each other, a substrate voltage generating circuit for generating a substrate voltage to be applied to the substrate region (MOS) and the substrate region (dummy), and a comparing circuit for measuring a current generated in the dummy MOS substrate, wherein an area ratio between the substrate region (dummy) and the source region (dummy) is substantially equal to an area ratio between the substrate region (MOS) and the source region (MOS).
1. A semiconductor integrated circuit comprising:
a MOS circuit having a substrate region (MOS) and a source region (MOS) separated from each other;
a dummy MOS circuit substrate-separated from the MOS circuit and having a substrate region (dummy) and a source region (dummy) separated from each other;
a substrate voltage generating circuit for generating a substrate voltage to be applied to the substrate region (MOS) and the substrate region (dummy); and
a comparator for comparing two voltage values respectively corresponding to a source current and a substrate current of the dummy MOS circuit, wherein
an area ratio between the substrate region (dummy) and the source region (dummy) is substantially equal to an area ratio between the substrate region (MOS) and the source region (MOS).
2. A semiconductor integrated circuit as claimed in claim 1 , Wherein the comparator increases a value of a current ratio detection signal outputted from the comparator according to a difference between the two voltage values respectively corresponding to a source current and a substrate current of the dummy MOS circuit.
3. A semiconductor integrated circuit as claimed in claim 1 , further comprising a noise generator for applying a noise to at least one of the substrate region (dummy) and the source region (dummy).
4. A semiconductor integrated circuit as claimed in claim 1 , further comprising a limit voltage generating circuit, wherein the limit voltage generating circuit restricts the substrate voltage generated by the substrate voltage generating circuit based on a result of the comparison of the two voltage values respectively corresponding to the source current and the substrate current of the dummy MOS circuit.
5. A semiconductor integrated circuit as claimed in claim 4 , wherein
the MOS circuit comprises a PMOS transistor, and
the limit voltage generating circuit restricts a lower-limit voltage of a substrate voltage of the PMOS transistor based on the result of the comparison of the two voltage values respectively corresponding to the source current and the substrate current of the dummy MOS circuit.
6. A semiconductor integrated circuit as claimed in claim 4 , wherein
the MOS circuit comprises an NMOS transistor, and
the limit voltage generating circuit restricts an upper-limit voltage of a substrate voltage of the NMOS transistor based on the result of the comparison of the two voltage values respectively corresponding to the source current and the substrate current of the dummy MOS circuit.
7. A semiconductor integrated circuit as claimed in claim 4 , wherein
the MOS circuit is a circuit including a PMOS transistor and an NMOS transistor, and
the limit voltage generating circuit restricts a lower-limit voltage of a substrate voltage of the PMOS transistor and restricts an upper-limit voltage of a substrate voltage of the NMOS transistor based on the result of the comparison of the two voltage values respectively corresponding to the source current and the substrate current of the dummy MOS circuit.
8. A semiconductor integrated circuit as claimed in claim 1 , wherein the MOS circuit is a memory cell.
9. A semiconductor integrated circuit comprising:
a MOS circuit having a substrate region (MOS) and a source region (MOS) separated from each other;
a dummy MOS circuit substrate-separated from the MOS circuit and having a substrate region (dummy) and a source region (dummy) separated from each other;
a substrate voltage generating circuit for generating a substrate voltage to be applied to the substrate region (MOS) and the substrate region (dummy); and
a comparator for comparing two voltage values respectively corresponding to a source current and a substrate current of the dummy MOS circuit, wherein
an area ratio (source region (dummy) area/substrate region (dummy) area) is larger than an area ratio (source region (MOS) area/substrate region (MOS) area).
10. A semiconductor integrated circuit as claimed in claim 9 , wherein the comparator increases a value of a current ratio detection signal outputted from the comparator according to a difference between the two voltage values respectively corresponding to a source current and a substrate current of the dummy MOS circuit.
11. A semiconductor integrated circuit as claimed in claim 9 , further comprising a noise generator for applying a noise to at least one of the substrate region (dummy) and the source region (dummy).
12. A semiconductor integrated circuit as claimed in claim 9 , further comprising a limit voltage generating circuit, wherein the limit voltage generating circuit restricts the substrate voltage generated by the substrate voltage generating circuit based on a result of the comparison of the two voltage values respectively corresponding to the source current and the substrate current of the dummy MOS circuit.