Low temperature aerosol deposition of a plasma resistive layer
Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator, dispensing the aerosol from the aerosol generator into a processing chamber toward a surface of a substrate, maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius, and depositing a layer from material in the aerosol on the substrate surface.
1. A method for low temperature aerosol deposition for semiconductor processing chamber components, comprising:
forming an aerosol of fine particles in an aerosol generator;
dispensing the aerosol from the generator into a processing chamber and toward a surface of a substrate comprising a material;
maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius;
embedding at least a portion of the fine particles in the surface of the substrate to form a bonding layer comprising an alloy of the fine particles and the substrate material; and
depositing a layer from material in the aerosol on the bonding layer.
2. The method of claim 1 , wherein the fine particles comprises a rare earth metal.
3. The method of claim 1 , wherein the fine particle comprises a yttrium containing material.
4. The method of claim 3 , wherein the yttrium containing material comprises at least one of bulk yttrium, yttrium oxide (Y 2 O 3 ), yttrium alloy, yttrium-aluminum-garnet (YAG) or yttrium oxide (Y 2 O 3 ) mixed in a metal.
5. The method of claim 3 , wherein the yttrium containing material further comprises:
a metal having the yttrium oxide (Y 2 O 3 ) mixed therein, wherein the metal is at least one of aluminum (Al), magnesium (Mg), titanium (Ti) or tantalum (Ta).
6. The method of claim 1 , wherein the fine particles have a diameter between about 0.05 μm and about 3 μm.
7. The method of claim 1 , wherein the fine particles have a diameter less than about 2 μm.
8. The method of claim 1 , wherein the layer deposited on the bonding layer is a plasma resistive layer.
9. The method of claim 1 , wherein the step of forming the aerosol of fine particles further comprises:
providing a carrier gas into the aerosol generator; and
ejecting the fine particles entrained with the carrier gas to the processing chamber.
10. The method of claim 9 , wherein the carrier gas comprises at least one of Ar, He, Xe, O 2 , N 2 , and H 2 .
11. The method of claim 10 , wherein the step of providing a carrier gas further comprises:
maintaining a pressure of the carrier gas in the aerosol generator between about 10 Pa and about 50 Pa.
12. The method of claim 1 , wherein the step of ejecting the aerosol of the fine particles further comprises:
delivering the aerosol of the fine particles toward the substrate surface at a rate at between about 250 m/s and about 1750 m/s.
13. The method of claim 1 , wherein the layer deposited on the bonding layer has a thickness between about 1 μm and about 100 μm.
14. The method of claim 1 , wherein the layer deposited on the bonding layer has a grain size between about 0.01 μm and about 1 μm.
15. The method of claim 1 , wherein the bonding layer has a thickness between about 0.01 μm and about 0.2 μm.
16. The method of claim 1 , wherein the substrate is a component used in or part of a semiconductor plasma processing chamber.
17. A method for low temperature aerosol deposition for semiconductor processing chamber components, comprising:
forming an aerosol of fine particles in an aerosol generator;
dispensing the aerosol from the generator into a processing chamber toward a surface of a substrate comprising a material;
maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius;
embedding at least a portion of the fine particles in the surface of the substrate to form a bonding layer comprising an alloy of the fine particles and the substrate material; and
depositing a rare earth metal containing layer on the bonding layer.
18. The method of claim 17 , wherein the fine particles have a diameter less than about 2 μm.
19. The method of claim 17 , wherein the rare earth metal containing layer is a yttrium containing material.
20. A method for low temperature aerosol deposition for semiconductor processing chamber components, comprising:
forming an aerosol of fine particles in an aerosol generator having a diameter less than 2 μm;
dispensing the aerosol from the generator into a processing chamber toward a surface of a substrate comprising a material;
maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius;
embedding at least a portion of the fine particles in the surface of the substrate to form a bonding layer comprising an alloy of the fine particles and the substrate material; and
depositing a rare earth metal containing layer on the bonding layer.
21. The method of claim 20 , wherein the rare earth metal containing layer is a yttrium containing material.