Methods for forming semiconducting device with titanium nitride orientation layer
A method for manufacturing a semiconductor device, the method including the steps of: (a) forming a titanium layer above a substrate; (b) forming a barrier layer above the titanium layer; (c) changing the titanium layer to a titanium nitride layer by conducting a heat treatment in a nitrogen containing atmosphere; (d) forming a first electrode above the barrier layer; (e) forming a ferroelectric layer above the first electrode; and (f) forming a second electrode above the ferroelectric layer.
1. A method for manufacturing a semiconductor device, the method comprising the steps of:
(a) forming a layer consisting of titanium above a substrate;
(b) forming a barrier layer above the layer consisting of titanium;
(c) changing the layer consisting of titanium to a titanium nitride layer by conducting a heat treatment in a nitrogen containing atmosphere;
(d) forming a first electrode above the barrier layer;
(e) forming a ferroelectric layer above the first electrode; and
(f) forming a second electrode above the ferroelectric layer,
wherein the titanium nitride layer, the barrier layer, the first electrode, and the ferroelectric layer are each formed to have a (111) orientation.
2. A method for manufacturing a semiconductor device according to claim 1 , wherein the step (c) is conducted before the step (d).
3. A method for manufacturing a semiconductor device according to claim 1 , wherein the step (c) is conducted after the step (d).
4. A method for manufacturing a semiconductor device according to claim 1 , wherein the titanium layer is formed to a film thickness of 5 nm to 20 nm in the step (a).
5. A method for manufacturing a semiconductor device according to claim 1 , wherein the barrier layer is a layer that includes titanium, aluminum and nitrogen, and the titanium nitride layer is a TiN layer.
6. A method for manufacturing a semiconductor device according to claim 5 , wherein the barrier layer has a composition defined as Ti (1−x) Al x N y (where x is in a range of 0<x≦0.3, and y is greater than 0 (0<y)).
7. A method for manufacturing a semiconductor device according to claim 1 , wherein, in the step (a), the titanium layer is formed above a plug conductive layer including tungsten.
8. The method of claim 1 , wherein the barrier layer is formed of TiAl.
9. The method of claim 1 , wherein the barrier layer is formed of TiSiN.
10. The method of claim 1 , wherein the barrier layer is formed of TaN.
11. The method of claim 1 , wherein the barrier layer is formed of TaSiN.