Semiconductor device comprising a photoelectric current amplifier
View Patent ↗The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
1. A semiconductor device comprising:
a photodiode comprising a photoelectric conversion layer;
a current amplifier circuit comprising a transistor; and
a switch between the photodiode and the current amplifier circuit,
wherein the photodiode and the current amplifier circuit are electrically connected to each other by the switch when intensity of entering light into the photodiode is lower than predetermined intensity so that a photoelectric current is amplified by the current amplifier circuit to be outputted, and
wherein the photodiode and at least a part of the current amplifier circuit are electrically disconnected by the switch when intensity of entering light into the photodiode is higher than predetermined intensity so that a photoelectric current is outputted with a reduced amplification factor.
2. A semiconductor device comprising:
a current mirror circuit comprising a first transistor and a second transistor which are connected to each other so that a common potential is applied to each gate electrode;
a photodiode of which a first terminal is connected to a power supply and a second terminal is connected to one of a source region and a drain region of the first transistor and a gate electrode of the first transistor; and
a switch which is inserted in series between the first terminal of the photodiode and one of a source region and a drain region of the second transistor,
wherein the switch is switched on and off in accordance with intensity of light received by the photodiode.
3. A semiconductor device comprising:
a current mirror circuit comprising a first transistor and a second transistor which are connected to each other so that a common potential is applied to each gate electrode;
a photodiode of which a first terminal is connected to a power supply and a second terminal is connected to one of source region and a drain region of the first transistor and the gate electrode of the first transistor; and
a switch which is inserted in series between the first terminal of the photodiode and one of a source region and a drain region of the second transistor,
wherein the switch is switched off when intensity of light received by the photodiode is higher than a predetermined value, and
wherein the switch is switched on when intensity of light received by the photodiode is lower than the predetermined value.
4. A semiconductor device comprising: a current mirror circuit comprising a first transistor and a second transistor which are connected to each other so that a common potential is applied to each gate electrode; a photodiode of which a first terminal is connected to a power supply and a second terminal is connected to one of source region and a drain region of the first transistor and the gate electrode of the first transistor; and a switch which is inserted in series between the first terminal of the photodiode and one of a source region and a drain region of the second transistor, wherein a controlling portion switches the switch in accordance with intensity of light received by the photodiode.
5. The semiconductor device according to claim 1 , wherein the photoelectric conversion layer includes a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer.
6. The semiconductor device according to claim 1 , wherein the transistor is a thin film transistor.
7. The semiconductor device according to claim 2 , wherein each of the first transistor and the second transistor is a thin film transistor.
8. The semiconductor device according to claim 3 , wherein each of the first transistor and the second transistor is a thin film transistor.
9. The semiconductor device according to claim 4 , wherein each of the first transistor and the second transistor is a thin film transistor.
10. The semiconductor device according to claim 1 , wherein the transistor has a source region, a drain region, a channel formation region, a gate insulating film, and a gate electrode.